Ab-initio modeling of effect of Boron and Phosphorus doping in CoFe/MgO Magnetic Tunnel Junctions

Ankit Kumar Verma, Bahniman Ghosh, Bhaskar Awadhiya, Tangudu Bharat Kumar

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work analysis of Boron and Phosphorus doping in CoFe/MgO Magnetic Tunnel Junction has been carried out using first principle calculations. Boron and Phosphorus are doped in CoFe electrode, at electrode barrier interface and in the bulk. In case of Boron doping tunneling magnetoresistance (TMR) of magnetic tunnel junction is reduced to a much lower value when it is doped at electrode barrier interface instead of bulk. However in case of Phosphorus doping TMR is almost same as when Boron atoms are doped in the bulk of electrode. Boron atoms present at interface cause distortion in Δ1 state symmetry which in turn tempers majority channel conductance. So prevention of Boron doping at interface or doping of Phosphorus atoms could result in the device having much higher value of TMR.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalJournal of Low Power Electronics
Volume10
Issue number3
DOIs
Publication statusPublished - 01-01-2014
Externally publishedYes

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Tunnel junctions
Boron
Phosphorus
Tunnelling magnetoresistance
Doping (additives)
Electrodes
Atoms

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Verma, Ankit Kumar ; Ghosh, Bahniman ; Awadhiya, Bhaskar ; Kumar, Tangudu Bharat. / Ab-initio modeling of effect of Boron and Phosphorus doping in CoFe/MgO Magnetic Tunnel Junctions. In: Journal of Low Power Electronics. 2014 ; Vol. 10, No. 3. pp. 361-364.
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Ab-initio modeling of effect of Boron and Phosphorus doping in CoFe/MgO Magnetic Tunnel Junctions. / Verma, Ankit Kumar; Ghosh, Bahniman; Awadhiya, Bhaskar; Kumar, Tangudu Bharat.

In: Journal of Low Power Electronics, Vol. 10, No. 3, 01.01.2014, p. 361-364.

Research output: Contribution to journalArticle

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