Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets

K. K. Nagaraja, A. Santhosh Kumar, H. S. Nagaraja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Transparent conducting aluminum doped zinc oxide (AZO) films were deposited on glass substrates by radio (RF) frequency magnetron sputtering employing zinc oxide and aluminum targets. The targets are fixed coaxially in one cathode, by using a center hollow aluminum disc. Gas pressure was kept constant and the sputter power was varied. The nature of AZO film was found to be polycrystalline with hexagonal structure and a preferred orientation along c-axis. The Al content in the films is determined using EDXA analysis and it is found to vary with the applied power. Surface morphology of the films was found to be uniform and has fine grained structure. Electrical resistivity of the deposited films was found to be as low as 26×10-4Ω-cm for the film deposited at 250 W. The average transparencies up to 85% in the visible region were obtained for all the films. Optical band gap of the films show a slight blue shift as indicated by the (αhν)2 v/s hν plots. In the present investigation we have controlled Al content in the films by adjusting the power to the coaxial targets. The value of resistivity was found to decrease with the amount of Al present in the sample.

Original languageEnglish
Title of host publicationOptics
Subtitle of host publicationPhenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light
Pages743-745
Number of pages3
DOIs
Publication statusPublished - 28-11-2011
EventInternational Conference on Light Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011 - Calicut, Kerala, India
Duration: 23-05-201125-05-2011

Publication series

NameAIP Conference Proceedings
Volume1391
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceInternational Conference on Light Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011
CountryIndia
CityCalicut, Kerala
Period23-05-1125-05-11

Fingerprint

sputtering
aluminum
thin films
zinc oxides
oxide films
electrical resistivity
blue shift
gas pressure
hollow
magnetron sputtering
plots
cathodes
adjusting
fine structure
conduction
glass

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Nagaraja, K. K., Kumar, A. S., & Nagaraja, H. S. (2011). Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets. In Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light (pp. 743-745). (AIP Conference Proceedings; Vol. 1391). https://doi.org/10.1063/1.3643666
Nagaraja, K. K. ; Kumar, A. Santhosh ; Nagaraja, H. S. / Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets. Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light. 2011. pp. 743-745 (AIP Conference Proceedings).
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abstract = "Transparent conducting aluminum doped zinc oxide (AZO) films were deposited on glass substrates by radio (RF) frequency magnetron sputtering employing zinc oxide and aluminum targets. The targets are fixed coaxially in one cathode, by using a center hollow aluminum disc. Gas pressure was kept constant and the sputter power was varied. The nature of AZO film was found to be polycrystalline with hexagonal structure and a preferred orientation along c-axis. The Al content in the films is determined using EDXA analysis and it is found to vary with the applied power. Surface morphology of the films was found to be uniform and has fine grained structure. Electrical resistivity of the deposited films was found to be as low as 26×10-4Ω-cm for the film deposited at 250 W. The average transparencies up to 85{\%} in the visible region were obtained for all the films. Optical band gap of the films show a slight blue shift as indicated by the (αhν)2 v/s hν plots. In the present investigation we have controlled Al content in the films by adjusting the power to the coaxial targets. The value of resistivity was found to decrease with the amount of Al present in the sample.",
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Nagaraja, KK, Kumar, AS & Nagaraja, HS 2011, Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets. in Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light. AIP Conference Proceedings, vol. 1391, pp. 743-745, International Conference on Light Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011, Calicut, Kerala, India, 23-05-11. https://doi.org/10.1063/1.3643666

Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets. / Nagaraja, K. K.; Kumar, A. Santhosh; Nagaraja, H. S.

Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light. 2011. p. 743-745 (AIP Conference Proceedings; Vol. 1391).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Nagaraja KK, Kumar AS, Nagaraja HS. Aluminum doped ZnO thin films by RF sputtering of coaxial ZnO and Al targets. In Optics: Phenomena, Materials, Devices, and Characterization, OPTICS 2011: International Conference on Light. 2011. p. 743-745. (AIP Conference Proceedings). https://doi.org/10.1063/1.3643666