Ambipolar behavior of Te and its effect on the optical emission of ZnO: Te epitaxial thin film

R. Sahu, K. Dileep, D. S. Negi, K. K. Nagaraja, R. Datta

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2 Citations (Scopus)


We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for TeO and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.

Original languageEnglish
Pages (from-to)1743-1748
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Issue number8
Publication statusPublished - 01-08-2015


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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