Ambipolar behavior of Te and its effect on the optical emission of ZnO: Te epitaxial thin film

R. Sahu; K. Dileep; D. S. Negi; K. K. Nagaraja; R. Datta

doi:10.1002/pssb.201451443

Ambipolar behavior of Te and its effect on the optical emission of ZnO: Te epitaxial thin film

R. Sahu, K. Dileep, D. S. Negi, K. K. Nagaraja, R. Datta

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for Te_O compared to Te_Zn. Emission at 3eV for Te_Zn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for Te_O and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.

Original language	English
Pages (from-to)	1743-1748
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	252
Issue number	8
DOIs	https://doi.org/10.1002/pssb.201451443
Publication status	Published - 01-08-2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for TeO and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.",

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AU - Datta, R.

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AB - We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for TeO and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.

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Ambipolar behavior of Te and its effect on the optical emission of ZnO: Te epitaxial thin film

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