Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits

Dhananjay, Chun Wei Ou, Chuan Yi Yang, Meng Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In this Letter, ambipolar transport properties of a bilayer of In2 O3 and a pentacene heterostructure have been realized. While In2 O3 thin film transistors exhibited a n -channel behavior, pentacene presumed p -channel characteristics on bare Si O2 p-Si substrates. However, when a bilayer of In2 O3 /pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n - and p -channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.

Original languageEnglish
Article number033306
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 04-08-2008

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transistors
hybrid structures
transport properties
conduction
electric potential
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dhananjay ; Ou, Chun Wei ; Yang, Chuan Yi ; Wu, Meng Chyi ; Chu, Chih Wei. / Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits. In: Applied Physics Letters. 2008 ; Vol. 93, No. 3.
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Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits. / Dhananjay; Ou, Chun Wei; Yang, Chuan Yi; Wu, Meng Chyi; Chu, Chih Wei.

In: Applied Physics Letters, Vol. 93, No. 3, 033306, 04.08.2008.

Research output: Contribution to journalArticle

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