Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits

Dhananjay, Chun Wei Ou, Chuan Yi Yang, Meng Chyi Wu, Chih Wei Chu

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11 Citations (Scopus)


In this Letter, ambipolar transport properties of a bilayer of In2 O3 and a pentacene heterostructure have been realized. While In2 O3 thin film transistors exhibited a n -channel behavior, pentacene presumed p -channel characteristics on bare Si O2 p-Si substrates. However, when a bilayer of In2 O3 /pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n - and p -channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.

Original languageEnglish
Article number033306
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 04-08-2008


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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