Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro-controlled SILAR method

V. K. Ashith, Gowrish K. Rao

Research output: Contribution to journalArticle

Abstract

Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro-controller-based successive ion layer adsorption and reaction method using ZnCl2 as a precursor. The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased crystallite size resulted in the reduction of grain boundary defects which, in turn, improved the electrical properties of the films. The energy band structure of the films was analysed using absorbance and photoluminescence spectra. The films displayed strong absorption for wavelengths less than 400 nm indicating the presence of a wide bandgap with shallow defect levels near the band edges. The bandgap of the films was estimated to be between 3.3 and 3.5 eV. The photoluminescence spectra of the films exhibited a prominent excitonic peak at around 3.33 eV. The defect level emissions were observed at around 3.1, 2.92, 2.76, and 2.64 eV. These emissions were attributed to the transitions from localized zinc and sulphur vacancy levels and interstitial states. An energy band diagram of the films was drawn based on the result of optical and photoluminescence studies.

Original languageEnglish
Pages (from-to)1286-1295
Number of pages10
JournalSurface and Interface Analysis
Volume50
Issue number12-13
DOIs
Publication statusPublished - 01-12-2018

Fingerprint

Zinc sulfide
zinc sulfides
Band structure
energy bands
Defects
defects
Photoluminescence
Crystallite size
photoluminescence
Energy gap
zinc sulfide
Sulfur
submerging
Vacancies
Zinc
controllers
interstitials
Grain boundaries
Electric properties
sulfur

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{eeb2cbbd9e864814bbacbcf0cb41f20c,
title = "Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro-controlled SILAR method",
abstract = "Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro-controller-based successive ion layer adsorption and reaction method using ZnCl2 as a precursor. The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased crystallite size resulted in the reduction of grain boundary defects which, in turn, improved the electrical properties of the films. The energy band structure of the films was analysed using absorbance and photoluminescence spectra. The films displayed strong absorption for wavelengths less than 400 nm indicating the presence of a wide bandgap with shallow defect levels near the band edges. The bandgap of the films was estimated to be between 3.3 and 3.5 eV. The photoluminescence spectra of the films exhibited a prominent excitonic peak at around 3.33 eV. The defect level emissions were observed at around 3.1, 2.92, 2.76, and 2.64 eV. These emissions were attributed to the transitions from localized zinc and sulphur vacancy levels and interstitial states. An energy band diagram of the films was drawn based on the result of optical and photoluminescence studies.",
author = "Ashith, {V. K.} and Rao, {Gowrish K.}",
year = "2018",
month = "12",
day = "1",
doi = "10.1002/sia.6520",
language = "English",
volume = "50",
pages = "1286--1295",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "12-13",

}

TY - JOUR

T1 - Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro-controlled SILAR method

AU - Ashith, V. K.

AU - Rao, Gowrish K.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro-controller-based successive ion layer adsorption and reaction method using ZnCl2 as a precursor. The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased crystallite size resulted in the reduction of grain boundary defects which, in turn, improved the electrical properties of the films. The energy band structure of the films was analysed using absorbance and photoluminescence spectra. The films displayed strong absorption for wavelengths less than 400 nm indicating the presence of a wide bandgap with shallow defect levels near the band edges. The bandgap of the films was estimated to be between 3.3 and 3.5 eV. The photoluminescence spectra of the films exhibited a prominent excitonic peak at around 3.33 eV. The defect level emissions were observed at around 3.1, 2.92, 2.76, and 2.64 eV. These emissions were attributed to the transitions from localized zinc and sulphur vacancy levels and interstitial states. An energy band diagram of the films was drawn based on the result of optical and photoluminescence studies.

AB - Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro-controller-based successive ion layer adsorption and reaction method using ZnCl2 as a precursor. The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased crystallite size resulted in the reduction of grain boundary defects which, in turn, improved the electrical properties of the films. The energy band structure of the films was analysed using absorbance and photoluminescence spectra. The films displayed strong absorption for wavelengths less than 400 nm indicating the presence of a wide bandgap with shallow defect levels near the band edges. The bandgap of the films was estimated to be between 3.3 and 3.5 eV. The photoluminescence spectra of the films exhibited a prominent excitonic peak at around 3.33 eV. The defect level emissions were observed at around 3.1, 2.92, 2.76, and 2.64 eV. These emissions were attributed to the transitions from localized zinc and sulphur vacancy levels and interstitial states. An energy band diagram of the films was drawn based on the result of optical and photoluminescence studies.

UR - http://www.scopus.com/inward/record.url?scp=85052634090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052634090&partnerID=8YFLogxK

U2 - 10.1002/sia.6520

DO - 10.1002/sia.6520

M3 - Article

AN - SCOPUS:85052634090

VL - 50

SP - 1286

EP - 1295

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 12-13

ER -