Annealing induced strong NBE emission of SILAR deposited ZnO thin films

Swati Pujar; Gowrish K.rao

doi:10.1016/j.matpr.2021.12.129

Annealing induced strong NBE emission of SILAR deposited ZnO thin films

Swati Pujar, Gowrish K.rao

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Deposition of ZnO thin films using SILAR method is reported. The films exhibited hexagonal wurtzite structure and the lattice parameters well matching with the theoretical values. Annealing increased the crystallite size, reduced the microstrain and dislocation density thereby proving the enhancement in the quality of the films. Morphology of the films is studied using SEM images. Absorbance spectra showed slight redshift in the absorbance edge on annealing. PL spectra showed improvement in the blue emissions on annealing which suggests device suitability in the UV region.

Original language	English
Pages (from-to)	56-61
Number of pages	6
Journal	Materials Today: Proceedings
Volume	55
DOIs	https://doi.org/10.1016/j.matpr.2021.12.129
Publication status	Published - 2022
Event	9th National Conference on Condensed Matter Physics and Applications, CMPA 2021 - Virtual, Online, India Duration: 16-09-2021 → 17-09-2021

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1016/j.matpr.2021.12.129

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title = "Annealing induced strong NBE emission of SILAR deposited ZnO thin films",

abstract = "Deposition of ZnO thin films using SILAR method is reported. The films exhibited hexagonal wurtzite structure and the lattice parameters well matching with the theoretical values. Annealing increased the crystallite size, reduced the microstrain and dislocation density thereby proving the enhancement in the quality of the films. Morphology of the films is studied using SEM images. Absorbance spectra showed slight redshift in the absorbance edge on annealing. PL spectra showed improvement in the blue emissions on annealing which suggests device suitability in the UV region.",

author = "Swati Pujar and Gowrish K.rao",

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AU - Pujar, Swati

AU - K.rao, Gowrish

PY - 2022

Y1 - 2022

N2 - Deposition of ZnO thin films using SILAR method is reported. The films exhibited hexagonal wurtzite structure and the lattice parameters well matching with the theoretical values. Annealing increased the crystallite size, reduced the microstrain and dislocation density thereby proving the enhancement in the quality of the films. Morphology of the films is studied using SEM images. Absorbance spectra showed slight redshift in the absorbance edge on annealing. PL spectra showed improvement in the blue emissions on annealing which suggests device suitability in the UV region.

AB - Deposition of ZnO thin films using SILAR method is reported. The films exhibited hexagonal wurtzite structure and the lattice parameters well matching with the theoretical values. Annealing increased the crystallite size, reduced the microstrain and dislocation density thereby proving the enhancement in the quality of the films. Morphology of the films is studied using SEM images. Absorbance spectra showed slight redshift in the absorbance edge on annealing. PL spectra showed improvement in the blue emissions on annealing which suggests device suitability in the UV region.

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EP - 61

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

SN - 2214-7853

T2 - 9th National Conference on Condensed Matter Physics and Applications, CMPA 2021

Y2 - 16 September 2021 through 17 September 2021

ER -

Annealing induced strong NBE emission of SILAR deposited ZnO thin films

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