Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits

Chih Wei Chu, Chun Wei Ou, Dhananjay, Zhong Yo Ho, You Che Chuang, Shiau Shin Cheng, Meng Chyi Wu, Kuo Chuan Ho

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

In this article, we report the fabrication of Sn O2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p -type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p -channel Sn O2 TFTs. The on/off ratio and the field-effect mobility were ∼ 103 and 0.011 cm2 V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p -channel oxide TFTs would open up new challenges in the area of transparent electronics.

Original languageEnglish
Article number122113
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
Publication statusPublished - 03-04-2008

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tin oxides
transistors
oxides
thin films
threshold voltage
evaporation
conductivity
fabrication
annealing
output
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chu, Chih Wei ; Ou, Chun Wei ; Dhananjay ; Ho, Zhong Yo ; Chuang, You Che ; Cheng, Shiau Shin ; Wu, Meng Chyi ; Ho, Kuo Chuan. / Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits. In: Applied Physics Letters. 2008 ; Vol. 92, No. 12.
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Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits. / Chu, Chih Wei; Ou, Chun Wei; Dhananjay; Ho, Zhong Yo; Chuang, You Che; Cheng, Shiau Shin; Wu, Meng Chyi; Ho, Kuo Chuan.

In: Applied Physics Letters, Vol. 92, No. 12, 122113, 03.04.2008.

Research output: Contribution to journalArticle

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