Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits

Chih Wei Chu, Chun Wei Ou, Dhananjay, Zhong Yo Ho, You Che Chuang, Shiau Shin Cheng, Meng Chyi Wu, Kuo Chuan Ho

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

In this article, we report the fabrication of Sn O2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p -type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p -channel Sn O2 TFTs. The on/off ratio and the field-effect mobility were ∼ 103 and 0.011 cm2 V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p -channel oxide TFTs would open up new challenges in the area of transparent electronics.

Original languageEnglish
Article number122113
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
Publication statusPublished - 03-04-2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits'. Together they form a unique fingerprint.

  • Cite this

    Chu, C. W., Ou, C. W., Dhananjay, Ho, Z. Y., Chuang, Y. C., Cheng, S. S., Wu, M. C., & Ho, K. C. (2008). Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits. Applied Physics Letters, 92(12), [122113]. https://doi.org/10.1063/1.2898217