In this article, we report the fabrication of Sn O2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p -type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p -channel Sn O2 TFTs. The on/off ratio and the field-effect mobility were ∼ 103 and 0.011 cm2 V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p -channel oxide TFTs would open up new challenges in the area of transparent electronics.
|Journal||Applied Physics Letters|
|Publication status||Published - 03-04-2008|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)