Characterization of boron- and phosphorous-incorporated tetrahedral amorphous carbon films deposited by the filtered cathodic vacuum arc process

Omvir Singh Panwar, Mohd Alim Khan, Mahesh Kumar, Sonnada Math Shivaprasad, Bukinakere Subbakrihniah Satyanarayana, Prakash Narain Dixit, Raghunath Bhattacharyya

Research output: Contribution to journalArticle

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Abstract

This paper reports the X-ray photoelectron spectroscopy (XPS), X-ray-induced Auger electron spectroscopy (XAES), and Raman studies of boron- and phosphorous-incorporated tetrahedral amorphous carbon (ta-C) films deposited by the filtered cathodic vacuum arc process. A systematic study of the influence of varying boron (B) and phosphorous (P) content on the properties of the as-grown ta-C films deposited at high negative substrate bias (-300 V) is reported by analyzing the C 1s, B 1s, and P 1s core levels using photoelectron spectroscopy. The sp3 and sp2 contents in the films were determined by measuring the width of the X-ray-induced Auger peaks. B incorporation in ta-C films up to 2.0 at.% increases the sp2 content and decreases the sp3 content by 3.6%, whereas P incorporation up to 2.0 at.% results in an increase of sp2 content and decrease of sp3 content by ̃30%. The valence band spectra show changes in the Fermi level as B and P are incorporated into the ta-C films. The characteristic Raman spectra c onfirm the high sp3 content in the deposited films. Thus, the study demonstrates, in the case of high negative substrate bias films, that a pronounced decrease in sp3fraction or the diamond-like nature of the ta-C films occurs upon P incorporation in comparison to that upon B incorporation.

Original languageEnglish
Article number065501
JournalJapanese Journal of Applied Physics
Volume48
Issue number6
DOIs
Publication statusPublished - 01-06-2009
Externally publishedYes

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Carbon films
Amorphous carbon
Amorphous films
Boron
boron
arcs
Vacuum
vacuum
carbon
X rays
Core levels
Substrates
Auger electron spectroscopy
Photoelectron spectroscopy
Valence bands
Fermi level
photoelectron spectroscopy
Raman scattering
Diamonds
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Panwar, Omvir Singh ; Khan, Mohd Alim ; Kumar, Mahesh ; Shivaprasad, Sonnada Math ; Satyanarayana, Bukinakere Subbakrihniah ; Dixit, Prakash Narain ; Bhattacharyya, Raghunath. / Characterization of boron- and phosphorous-incorporated tetrahedral amorphous carbon films deposited by the filtered cathodic vacuum arc process. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 6.
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abstract = "This paper reports the X-ray photoelectron spectroscopy (XPS), X-ray-induced Auger electron spectroscopy (XAES), and Raman studies of boron- and phosphorous-incorporated tetrahedral amorphous carbon (ta-C) films deposited by the filtered cathodic vacuum arc process. A systematic study of the influence of varying boron (B) and phosphorous (P) content on the properties of the as-grown ta-C films deposited at high negative substrate bias (-300 V) is reported by analyzing the C 1s, B 1s, and P 1s core levels using photoelectron spectroscopy. The sp3 and sp2 contents in the films were determined by measuring the width of the X-ray-induced Auger peaks. B incorporation in ta-C films up to 2.0 at.{\%} increases the sp2 content and decreases the sp3 content by 3.6{\%}, whereas P incorporation up to 2.0 at.{\%} results in an increase of sp2 content and decrease of sp3 content by ̃30{\%}. The valence band spectra show changes in the Fermi level as B and P are incorporated into the ta-C films. The characteristic Raman spectra c onfirm the high sp3 content in the deposited films. Thus, the study demonstrates, in the case of high negative substrate bias films, that a pronounced decrease in sp3fraction or the diamond-like nature of the ta-C films occurs upon P incorporation in comparison to that upon B incorporation.",
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Characterization of boron- and phosphorous-incorporated tetrahedral amorphous carbon films deposited by the filtered cathodic vacuum arc process. / Panwar, Omvir Singh; Khan, Mohd Alim; Kumar, Mahesh; Shivaprasad, Sonnada Math; Satyanarayana, Bukinakere Subbakrihniah; Dixit, Prakash Narain; Bhattacharyya, Raghunath.

In: Japanese Journal of Applied Physics, Vol. 48, No. 6, 065501, 01.06.2009.

Research output: Contribution to journalArticle

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