Characterization of cadmium sulphide thin films prepared by successive ionic layers adsorption and reaction method

B. V. Rajendra, Benjamin Fuchs, Kekuda Dhananjaya

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of the samples. The structural characterization and optical characterization were carried out. The deposited films by lower growth rate and lower precursor concentration solutions were having mixed hexagonal and cubic phases. Thickness dependence of the optical band gap energy was evaluated and it varies from 2.46 to 2.32 eV in the thickness range 38-330 nm.

Original languageEnglish
Pages (from-to)567-571
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number2
DOIs
Publication statusPublished - 2013

Fingerprint

Cadmium sulfide
cadmium sulfides
Adsorption
Thin films
adsorption
Optical band gaps
thin films
low concentrations
Glass
preparation
cycles
glass
room temperature
Substrates
Temperature
cadmium sulfide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of the samples. The structural characterization and optical characterization were carried out. The deposited films by lower growth rate and lower precursor concentration solutions were having mixed hexagonal and cubic phases. Thickness dependence of the optical band gap energy was evaluated and it varies from 2.46 to 2.32 eV in the thickness range 38-330 nm.",
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Characterization of cadmium sulphide thin films prepared by successive ionic layers adsorption and reaction method. / Rajendra, B. V.; Fuchs, Benjamin; Dhananjaya, Kekuda.

In: Journal of Materials Science: Materials in Electronics, Vol. 24, No. 2, 2013, p. 567-571.

Research output: Contribution to journalArticle

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AU - Rajendra, B. V.

AU - Fuchs, Benjamin

AU - Dhananjaya, Kekuda

PY - 2013

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AB - Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of the samples. The structural characterization and optical characterization were carried out. The deposited films by lower growth rate and lower precursor concentration solutions were having mixed hexagonal and cubic phases. Thickness dependence of the optical band gap energy was evaluated and it varies from 2.46 to 2.32 eV in the thickness range 38-330 nm.

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