Characterization of p-CdTe/n-CdS hetero-junctions

M. G. Mahesha, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume12
Issue number3
DOIs
Publication statusPublished - 06-2009

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

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