Characterization of p-CdTe/n-CdS hetero-junctions

M. G. Mahesha, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume12
Issue number3
DOIs
Publication statusPublished - 06-2009

Fingerprint

Cadmium telluride
Cadmium sulfide
Thermal evaporation
Energy gap
Crystalline materials
Glass
Thin films
cadmium tellurides
cadmium sulfides
Substrates
sulfides
diagrams
evaporation
conduction
Temperature
glass
thin films
temperature
cadmium telluride
cadmium sulfide

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mahesha, M. G. ; Bangera, Kasturi V. ; Shivakumar, G. K. / Characterization of p-CdTe/n-CdS hetero-junctions. In: Materials Science in Semiconductor Processing. 2009 ; Vol. 12, No. 3. pp. 89-93.
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Characterization of p-CdTe/n-CdS hetero-junctions. / Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

In: Materials Science in Semiconductor Processing, Vol. 12, No. 3, 06.2009, p. 89-93.

Research output: Contribution to journalArticle

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