Characterization of thin film Al/p-CdTe schottky diode

M. G. Mahesha, V. B. Kasturi, G. K. Shivakumar

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.

Original languageEnglish
Pages (from-to)151-156
Number of pages6
JournalTurkish Journal of Physics
Volume32
Issue number3
Publication statusPublished - 01-05-2008

Fingerprint

Schottky diodes
thin films
energy bands
electric contacts
capacitance
diagrams
evaporation
activation energy
electrical resistivity
electric potential
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Mahesha, M. G., Kasturi, V. B., & Shivakumar, G. K. (2008). Characterization of thin film Al/p-CdTe schottky diode. Turkish Journal of Physics, 32(3), 151-156.
Mahesha, M. G. ; Kasturi, V. B. ; Shivakumar, G. K. / Characterization of thin film Al/p-CdTe schottky diode. In: Turkish Journal of Physics. 2008 ; Vol. 32, No. 3. pp. 151-156.
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Mahesha, MG, Kasturi, VB & Shivakumar, GK 2008, 'Characterization of thin film Al/p-CdTe schottky diode', Turkish Journal of Physics, vol. 32, no. 3, pp. 151-156.

Characterization of thin film Al/p-CdTe schottky diode. / Mahesha, M. G.; Kasturi, V. B.; Shivakumar, G. K.

In: Turkish Journal of Physics, Vol. 32, No. 3, 01.05.2008, p. 151-156.

Research output: Contribution to journalArticle

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