Characterization of thin film Al/p-CdTe schottky diode

M. G. Mahesha, V. B. Kasturi, G. K. Shivakumar

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.

Original languageEnglish
Pages (from-to)151-156
Number of pages6
JournalTurkish Journal of Physics
Volume32
Issue number3
Publication statusPublished - 01-05-2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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