Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors

Dhananjay, Chih Wei Chu, Chun Wei Ou, Meng Chyi Wu, Zhong Yo Ho, Kuo Chuan Ho, Shih Wei Lee

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

Original languageEnglish
Article number232103
JournalApplied Physics Letters
Volume92
Issue number23
DOIs
Publication statusPublished - 20-06-2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Complementary inverter circuits based on p-SnO<sub>2</sub> and n-In <sub>2</sub>O<sub>3</sub> thin film transistors'. Together they form a unique fingerprint.

  • Cite this

    Dhananjay, Chu, C. W., Ou, C. W., Wu, M. C., Ho, Z. Y., Ho, K. C., & Lee, S. W. (2008). Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors. Applied Physics Letters, 92(23), [232103]. https://doi.org/10.1063/1.2936275