Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors

Dhananjay, Chih Wei Chu, Chun Wei Ou, Meng Chyi Wu, Zhong Yo Ho, Kuo Chuan Ho, Shih Wei Lee

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

Original languageEnglish
Article number232103
JournalApplied Physics Letters
Volume92
Issue number23
DOIs
Publication statusPublished - 20-06-2008

Fingerprint

transistors
thin films
indium oxides
tin oxides
evaporation
conduction
conductivity
oxidation
oxygen
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dhananjay, Chu, C. W., Ou, C. W., Wu, M. C., Ho, Z. Y., Ho, K. C., & Lee, S. W. (2008). Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors. Applied Physics Letters, 92(23), [232103]. https://doi.org/10.1063/1.2936275
Dhananjay ; Chu, Chih Wei ; Ou, Chun Wei ; Wu, Meng Chyi ; Ho, Zhong Yo ; Ho, Kuo Chuan ; Lee, Shih Wei. / Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors. In: Applied Physics Letters. 2008 ; Vol. 92, No. 23.
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Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors. / Dhananjay; Chu, Chih Wei; Ou, Chun Wei; Wu, Meng Chyi; Ho, Zhong Yo; Ho, Kuo Chuan; Lee, Shih Wei.

In: Applied Physics Letters, Vol. 92, No. 23, 232103, 20.06.2008.

Research output: Contribution to journalArticle

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AU - Dhananjay, null

AU - Chu, Chih Wei

AU - Ou, Chun Wei

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AU - Ho, Zhong Yo

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AB - Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

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