Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

K. Gowrish Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages601-602
Number of pages2
Volume1349
EditionPART A
DOIs
Publication statusPublished - 12-09-2011
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26-12-201030-12-2010

Conference

Conference55th DAE Solid State Physics Symposium 2010
CountryIndia
CityManipal
Period26-12-1030-12-10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Rao, K. G., Bangera, K. V., & Shivakumar, G. K. (2011). Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes. In Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010 (PART A ed., Vol. 1349, pp. 601-602) https://doi.org/10.1063/1.3606001