Crystallographic phase separation and band gap of ZnO1-xSx(x=0.1-0.3) alloy thin films grown by pulsed laser deposition

K. Dileep, R. Sahu, K. K. Nagaraja, R. Datta

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Crystallographic phase separation and optical properties of ZnO1-xSx(x=0.1-0.3) alloy thin films grown by pulsed laser deposition (PLD) on c-plane sapphire substrate have been investigated with and without using ZnO buffer layer between the film and substrate. ZnO buffer layer assists in lattice matching of the alloy thin film and influences the phase separation and incorporation of S in this system. ZnO0.7S0.3thin film separated into four different phases when directly grown on c-plane sapphire compared to two when grown using ∼8 nm thick ZnO buffer layer. ZnO0.88S0.12thin film showed a single phase with tilt between crystallites but forms epitaxial film without any tilt on ZnO buffer layer. Incorporation of S is close to the targeted value for the films grown with the buffer layer. With the help of buffer layer we have been able to grow epitaxial film up to 17 at% S. Band gap for each alloy phase has been determined by low loss electron energy loss spectroscopy and a band bowing parameter of ∼5 eV is obtained.

Original languageEnglish
Pages (from-to)124-129
Number of pages6
JournalJournal of Crystal Growth
Volume402
DOIs
Publication statusPublished - 01-01-2014

Fingerprint

Buffer layers
Pulsed laser deposition
Phase separation
pulsed laser deposition
Energy gap
buffers
Thin films
thin films
Aluminum Oxide
Epitaxial films
Sapphire
sapphire
Bending (forming)
S band
Electron energy loss spectroscopy
Substrates
Crystallites
crystallites
Optical properties
energy dissipation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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title = "Crystallographic phase separation and band gap of ZnO1-xSx(x=0.1-0.3) alloy thin films grown by pulsed laser deposition",
abstract = "Crystallographic phase separation and optical properties of ZnO1-xSx(x=0.1-0.3) alloy thin films grown by pulsed laser deposition (PLD) on c-plane sapphire substrate have been investigated with and without using ZnO buffer layer between the film and substrate. ZnO buffer layer assists in lattice matching of the alloy thin film and influences the phase separation and incorporation of S in this system. ZnO0.7S0.3thin film separated into four different phases when directly grown on c-plane sapphire compared to two when grown using ∼8 nm thick ZnO buffer layer. ZnO0.88S0.12thin film showed a single phase with tilt between crystallites but forms epitaxial film without any tilt on ZnO buffer layer. Incorporation of S is close to the targeted value for the films grown with the buffer layer. With the help of buffer layer we have been able to grow epitaxial film up to 17 at{\%} S. Band gap for each alloy phase has been determined by low loss electron energy loss spectroscopy and a band bowing parameter of ∼5 eV is obtained.",
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Crystallographic phase separation and band gap of ZnO1-xSx(x=0.1-0.3) alloy thin films grown by pulsed laser deposition. / Dileep, K.; Sahu, R.; Nagaraja, K. K.; Datta, R.

In: Journal of Crystal Growth, Vol. 402, 01.01.2014, p. 124-129.

Research output: Contribution to journalArticle

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