Defect density estimation in Nanocluster carbon thin films

Shounak De, B. S. Satyanarayana, Mohan Rao, V. H S Moorthy

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3 Citations (Scopus)

Abstract

Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp2 and sp3 bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the Fermi level, g (Ef), have been obtained from the SCLC measurements ranges between 6 1017 cm-3 eV-1 to 8x1017 cm-3 eV-1.

Original languageEnglish
Pages (from-to)657-663
Number of pages7
JournalRomanian Reports of Physics
Volume57
Issue number3-4
Publication statusPublished - 2012

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

De, S., Satyanarayana, B. S., Rao, M., & Moorthy, V. H. S. (2012). Defect density estimation in Nanocluster carbon thin films. Romanian Reports of Physics, 57(3-4), 657-663.