Dependence of channel thickness on the performance of In2O 3 thin film transistors

Dhananjay, Shiau Shin Cheng, Chuan Yi Yang, Chun Wei Ou, You Che Chuang, M. Chyi Wu, Chih Wei Chu

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Abstract

Bottom gate and top contact thin film transistors were fabricated using In2O3 thin films as active channel layers. Thin films of varying thicknesses in the range 5-20 nm were deposited on an SiO2 gate dielectric by the thermal evaporation process in the presence of high purity oxygen. The results of atomic force microscopy show that all the films exhibit dense grain distribution with a root-mean-square roughness in the range 0.6-8.0 nm. Irrespective of the thickness of the channel layer, the on/off ratio of the device is 104. The channel mobility and resistivity were found to be a strong function of the thickness of the active layer. The Levinson model was used to calculate the trap density and the grain boundary mobility. The low processing temperature shows the possibility of utilizing these devices on flexible substrates such as polymer substrates.

Original languageEnglish
Article number092006
JournalJournal of Physics D: Applied Physics
Volume41
Issue number9
DOIs
Publication statusPublished - 07-05-2008

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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