Dependence of channel thickness on the performance of In2O 3 thin film transistors

Dhananjay, Shiau Shin Cheng, Chuan Yi Yang, Chun Wei Ou, You Che Chuang, M. Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Bottom gate and top contact thin film transistors were fabricated using In2O3 thin films as active channel layers. Thin films of varying thicknesses in the range 5-20 nm were deposited on an SiO2 gate dielectric by the thermal evaporation process in the presence of high purity oxygen. The results of atomic force microscopy show that all the films exhibit dense grain distribution with a root-mean-square roughness in the range 0.6-8.0 nm. Irrespective of the thickness of the channel layer, the on/off ratio of the device is 104. The channel mobility and resistivity were found to be a strong function of the thickness of the active layer. The Levinson model was used to calculate the trap density and the grain boundary mobility. The low processing temperature shows the possibility of utilizing these devices on flexible substrates such as polymer substrates.

Original languageEnglish
Article number092006
JournalJournal of Physics D: Applied Physics
Volume41
Issue number9
DOIs
Publication statusPublished - 07-05-2008

Fingerprint

Thin film transistors
transistors
Gates (transistor)
Thin films
Thermal evaporation
Gate dielectrics
Substrates
thin films
Atomic force microscopy
Polymers
Grain boundaries
Surface roughness
Oxygen
purity
roughness
grain boundaries
Processing
evaporation
traps
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Dhananjay ; Cheng, Shiau Shin ; Yang, Chuan Yi ; Ou, Chun Wei ; Chuang, You Che ; Chyi Wu, M. ; Chu, Chih Wei. / Dependence of channel thickness on the performance of In2O 3 thin film transistors. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 9.
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Dependence of channel thickness on the performance of In2O 3 thin film transistors. / Dhananjay; Cheng, Shiau Shin; Yang, Chuan Yi; Ou, Chun Wei; Chuang, You Che; Chyi Wu, M.; Chu, Chih Wei.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 9, 092006, 07.05.2008.

Research output: Contribution to journalArticle

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