Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction

K. K. Nagaraja, M. P. Telenkov, I. P. Kazakov, S. A. Savinov, Yu A. Mityagin

Research output: Contribution to journalArticle

Abstract

Herein, we present a quantum well (QW) structure design for the intrinsic region of p-i-n solar cells to extend the absorption of incident photon flux. The structure parameters to achieve suitable level positions for the suggested p-i-n junction have been calculated theoretically by solving the Schrödinger equation. A GaAs/Al0.3Ga0.7As triple quantum well with the theoretically calculated structure parameters has been grown by molecular beam epitaxy. The photoluminescence measurements on the fabricated structure show the emission from the corresponding QWs. Further experiments are underway to understand the possible tunneling of photo-generated carriers through the wells.

Original languageEnglish
Pages (from-to)2744-2747
Number of pages4
JournalMaterials Today: Proceedings
Volume3
Issue number8
DOIs
Publication statusPublished - 01-01-2016

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Resonant tunneling
Semiconductor quantum wells
Electric fields
Molecular beam epitaxy
Solar cells
Photoluminescence
Photons
Fluxes
Experiments
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Nagaraja, K. K. ; Telenkov, M. P. ; Kazakov, I. P. ; Savinov, S. A. ; Mityagin, Yu A. / Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction. In: Materials Today: Proceedings. 2016 ; Vol. 3, No. 8. pp. 2744-2747.
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Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction. / Nagaraja, K. K.; Telenkov, M. P.; Kazakov, I. P.; Savinov, S. A.; Mityagin, Yu A.

In: Materials Today: Proceedings, Vol. 3, No. 8, 01.01.2016, p. 2744-2747.

Research output: Contribution to journalArticle

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