Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Dhananjay, Satyendra Singh, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Original languageEnglish
Pages (from-to)421-424
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume88
Issue number2
DOIs
Publication statusPublished - 01-08-2007

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Zinc Oxide
Ferroelectricity
Zinc oxide
Oxide films
Sol-gels
Permittivity
Thin films
Growth temperature
Hysteresis loops
Superconducting transition temperature
Phase transitions
Polarization
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Dhananjay ; Singh, Satyendra ; Nagaraju, J. ; Krupanidhi, S. B. / Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route. In: Applied Physics A: Materials Science and Processing. 2007 ; Vol. 88, No. 2. pp. 421-424.
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Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route. / Dhananjay; Singh, Satyendra; Nagaraju, J.; Krupanidhi, S. B.

In: Applied Physics A: Materials Science and Processing, Vol. 88, No. 2, 01.08.2007, p. 421-424.

Research output: Contribution to journalArticle

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