Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Dhananjay, S. B. Krupanidhi

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

Original languageEnglish
Article number082905
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
Publication statusPublished - 31-08-2006

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dielectric properties
sputtering
polarization
thin films
hysteresis
permittivity
ferroelectricity
wurtzite
temperature
transition temperature
anomalies
electrical resistivity
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.",
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Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering. / Dhananjay; Krupanidhi, S. B.

In: Applied Physics Letters, Vol. 89, No. 8, 082905, 31.08.2006.

Research output: Contribution to journalArticle

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AB - Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

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