Doping ZnS and ZnSe thin films with bismuth

A comparison between sandwiching technique and nano-particle incorporation

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6 Citations (Scopus)

Abstract

The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.

Original languageEnglish
Pages (from-to)137-143
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume26
Issue number1
DOIs
Publication statusPublished - 01-01-2014

Fingerprint

Bismuth
bismuth
Doping (additives)
Thin films
thin films
Hall effect
Carrier concentration

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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AB - The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.

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