Dual gate thin film transistors based on indium oxide active layers

Dhananjaya Kekuda, K. Mohan Rao, Amita Tolpadi, C. W. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages1081-1082
Number of pages2
Volume1349
EditionPART A
DOIs
Publication statusPublished - 12-09-2011
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26-12-201030-12-2010

Conference

Conference55th DAE Solid State Physics Symposium 2010
CountryIndia
CityManipal
Period26-12-1030-12-10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Kekuda, D., Rao, K. M., Tolpadi, A., & Chu, C. W. (2011). Dual gate thin film transistors based on indium oxide active layers. In Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010 (PART A ed., Vol. 1349, pp. 1081-1082) https://doi.org/10.1063/1.3606237