Effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS thin film light sensors

Gowrish K. Rao, Ashith V. K., K. Priya, Pawan Kumar

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS light sensors is evaluated in detail. The device was fabricated by vacuum evaporation method. The bismuth nanoparticles were obtained on the substrates kept at 453 K. The electrical conductivity of ZnTe layer was found to increase significantly after the introduction of bismuth nanoparticles. The I-V and C-V characteristics of the devices showed significant improvement in the electrical characteristics after doping. The photo-response properties of the diodes was also found to improve after the incorporation of bismuth. The photocurrent increased nearly 10 times and the photo-response was found to be much faster.

Original languageEnglish
Pages (from-to)194-200
Number of pages7
JournalSensors and Actuators, A: Physical
Volume284
DOIs
Publication statusPublished - 01-12-2018

Fingerprint

Bismuth
bismuth
Nanoparticles
Thin films
nanoparticles
sensors
Sensors
thin films
Vacuum evaporation
Photocurrents
photocurrents
Diodes
diodes
Doping (additives)
evaporation
vacuum
electrical resistivity
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

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abstract = "The effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS light sensors is evaluated in detail. The device was fabricated by vacuum evaporation method. The bismuth nanoparticles were obtained on the substrates kept at 453 K. The electrical conductivity of ZnTe layer was found to increase significantly after the introduction of bismuth nanoparticles. The I-V and C-V characteristics of the devices showed significant improvement in the electrical characteristics after doping. The photo-response properties of the diodes was also found to improve after the incorporation of bismuth. The photocurrent increased nearly 10 times and the photo-response was found to be much faster.",
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Effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS thin film light sensors. / Rao, Gowrish K.; K., Ashith V.; Priya, K.; Kumar, Pawan.

In: Sensors and Actuators, A: Physical, Vol. 284, 01.12.2018, p. 194-200.

Research output: Contribution to journalArticle

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