Abstract
The effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS light sensors is evaluated in detail. The device was fabricated by vacuum evaporation method. The bismuth nanoparticles were obtained on the substrates kept at 453 K. The electrical conductivity of ZnTe layer was found to increase significantly after the introduction of bismuth nanoparticles. The I-V and C-V characteristics of the devices showed significant improvement in the electrical characteristics after doping. The photo-response properties of the diodes was also found to improve after the incorporation of bismuth. The photocurrent increased nearly 10 times and the photo-response was found to be much faster.
| Original language | English |
|---|---|
| Pages (from-to) | 194-200 |
| Number of pages | 7 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 284 |
| DOIs | |
| Publication status | Published - 01-12-2018 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering