Effect of composition on SILAR deposited CdxZn1-xS thin films

K. V. Ashith, K. Gowrish Rao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

Original languageEnglish
Title of host publicationDAE Solid State Physics Symposium 2017
PublisherAmerican Institute of Physics Inc.
Volume1942
ISBN (Electronic)9780735416345
DOIs
Publication statusPublished - 10-04-2018
Externally publishedYes
Event62nd DAE Solid State Physics Symposium 2017 - Anushaktinagar, Mumbai, India
Duration: 26-12-201730-12-2017

Conference

Conference62nd DAE Solid State Physics Symposium 2017
CountryIndia
CityAnushaktinagar, Mumbai
Period26-12-1730-12-17

Fingerprint

adsorption
thin films
ions
heterojunctions
zinc sulfides
cadmium sulfides
optoelectronic devices
absorbers
plots
glass
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ashith, K. V., & Gowrish Rao, K. (2018). Effect of composition on SILAR deposited CdxZn1-xS thin films. In DAE Solid State Physics Symposium 2017 (Vol. 1942). [080008] American Institute of Physics Inc.. https://doi.org/10.1063/1.5028842
Ashith, K. V. ; Gowrish Rao, K. / Effect of composition on SILAR deposited CdxZn1-xS thin films. DAE Solid State Physics Symposium 2017. Vol. 1942 American Institute of Physics Inc., 2018.
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Ashith, KV & Gowrish Rao, K 2018, Effect of composition on SILAR deposited CdxZn1-xS thin films. in DAE Solid State Physics Symposium 2017. vol. 1942, 080008, American Institute of Physics Inc., 62nd DAE Solid State Physics Symposium 2017, Anushaktinagar, Mumbai, India, 26-12-17. https://doi.org/10.1063/1.5028842

Effect of composition on SILAR deposited CdxZn1-xS thin films. / Ashith, K. V.; Gowrish Rao, K.

DAE Solid State Physics Symposium 2017. Vol. 1942 American Institute of Physics Inc., 2018. 080008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

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Ashith KV, Gowrish Rao K. Effect of composition on SILAR deposited CdxZn1-xS thin films. In DAE Solid State Physics Symposium 2017. Vol. 1942. American Institute of Physics Inc. 2018. 080008 https://doi.org/10.1063/1.5028842