Effect of doping concentration and annealing temperature on nitrogen-doped ZnO thin films

an investigation through spectroscopic techniques

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Abstract

Undoped and nitrogen-doped ZnO (NZO) thin films were deposited by sol–gel spin-coating technique on glass substrates. The thin film preparation was accomplished using zinc acetate dihydrate, monoethanolamine and 2-methoxyethanol as the precursors. Ammonium acetate was used as the source of nitrogen for doping. The effect of dopants and the post-heating temperature on the various physical properties of the deposited films was explored. The X-ray diffraction studies reveal the polycrystalline nature of the films which possess a preferred c-axis orientation. Raman characterizations of the films show a clear indication of nitrogen incorporation in the films. The carrier concentration of the thin films was of the order of 10 17 /cm 3 and resistivity as minimum as 0.371 Ω cm was observed for 1 at.% NZO thin films post-heated at 500 °C. The 1 at.% and 2 at.% doped NZO films post-heated at 300 °C and 1 at.%, 2 at.% and 3 at.% doped NZO films with post-heat treatment at 500 °C exhibited p-type conductivity. In the aging study, 500 °C annealed films retained p-type conductivity for 5 days.

Original languageEnglish
Article number394
JournalApplied Physics A: Materials Science and Processing
Volume125
Issue number6
DOIs
Publication statusPublished - 01-06-2019

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Nitrogen
Doping (additives)
Annealing
Thin films
Temperature
Zinc Acetate
Film preparation
Ethanolamine
Coating techniques
Spin coating
Carrier concentration
Zinc
Physical properties
Aging of materials
Heat treatment
Heating
X ray diffraction
Glass
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Effect of doping concentration and annealing temperature on nitrogen-doped ZnO thin films: an investigation through spectroscopic techniques",
abstract = "Undoped and nitrogen-doped ZnO (NZO) thin films were deposited by sol–gel spin-coating technique on glass substrates. The thin film preparation was accomplished using zinc acetate dihydrate, monoethanolamine and 2-methoxyethanol as the precursors. Ammonium acetate was used as the source of nitrogen for doping. The effect of dopants and the post-heating temperature on the various physical properties of the deposited films was explored. The X-ray diffraction studies reveal the polycrystalline nature of the films which possess a preferred c-axis orientation. Raman characterizations of the films show a clear indication of nitrogen incorporation in the films. The carrier concentration of the thin films was of the order of 10 17 /cm 3 and resistivity as minimum as 0.371 Ω cm was observed for 1 at.{\%} NZO thin films post-heated at 500 °C. The 1 at.{\%} and 2 at.{\%} doped NZO films post-heated at 300 °C and 1 at.{\%}, 2 at.{\%} and 3 at.{\%} doped NZO films with post-heat treatment at 500 °C exhibited p-type conductivity. In the aging study, 500 °C annealed films retained p-type conductivity for 5 days.",
author = "U. Chaitra and Mahesha, {M. G.} and Dhananjaya Kekuda and Rao, {K. Mohan}",
year = "2019",
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T2 - an investigation through spectroscopic techniques

AU - Chaitra, U.

AU - Mahesha, M. G.

AU - Kekuda, Dhananjaya

AU - Rao, K. Mohan

PY - 2019/6/1

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N2 - Undoped and nitrogen-doped ZnO (NZO) thin films were deposited by sol–gel spin-coating technique on glass substrates. The thin film preparation was accomplished using zinc acetate dihydrate, monoethanolamine and 2-methoxyethanol as the precursors. Ammonium acetate was used as the source of nitrogen for doping. The effect of dopants and the post-heating temperature on the various physical properties of the deposited films was explored. The X-ray diffraction studies reveal the polycrystalline nature of the films which possess a preferred c-axis orientation. Raman characterizations of the films show a clear indication of nitrogen incorporation in the films. The carrier concentration of the thin films was of the order of 10 17 /cm 3 and resistivity as minimum as 0.371 Ω cm was observed for 1 at.% NZO thin films post-heated at 500 °C. The 1 at.% and 2 at.% doped NZO films post-heated at 300 °C and 1 at.%, 2 at.% and 3 at.% doped NZO films with post-heat treatment at 500 °C exhibited p-type conductivity. In the aging study, 500 °C annealed films retained p-type conductivity for 5 days.

AB - Undoped and nitrogen-doped ZnO (NZO) thin films were deposited by sol–gel spin-coating technique on glass substrates. The thin film preparation was accomplished using zinc acetate dihydrate, monoethanolamine and 2-methoxyethanol as the precursors. Ammonium acetate was used as the source of nitrogen for doping. The effect of dopants and the post-heating temperature on the various physical properties of the deposited films was explored. The X-ray diffraction studies reveal the polycrystalline nature of the films which possess a preferred c-axis orientation. Raman characterizations of the films show a clear indication of nitrogen incorporation in the films. The carrier concentration of the thin films was of the order of 10 17 /cm 3 and resistivity as minimum as 0.371 Ω cm was observed for 1 at.% NZO thin films post-heated at 500 °C. The 1 at.% and 2 at.% doped NZO films post-heated at 300 °C and 1 at.%, 2 at.% and 3 at.% doped NZO films with post-heat treatment at 500 °C exhibited p-type conductivity. In the aging study, 500 °C annealed films retained p-type conductivity for 5 days.

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