Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films

Deepangkar Sarkar, G. Sanjeev, T. N. Bhat, M. G. Mahesha

Research output: Contribution to journalArticle

Abstract

Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Volume20
Issue number1-2
Publication statusPublished - 01-01-2018

Fingerprint

Electron beams
Irradiation
electron beams
Thin films
irradiation
Electron irradiation
Thermal evaporation
electron irradiation
thin films
Raman scattering
Structural properties
Electric properties
Optical properties
electrical properties
evaporation
Raman spectra
optical properties
dosage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films. / Sarkar, Deepangkar; Sanjeev, G.; Bhat, T. N.; Mahesha, M. G.

In: Journal of Optoelectronics and Advanced Materials, Vol. 20, No. 1-2, 01.01.2018, p. 84-89.

Research output: Contribution to journalArticle

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