Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics

Shounak De, B. S. Satyanarayana, Ganesh Sanjeev, K. Ramakrishna, K. Mohan Rao, Manjunatha Pattabi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The influence of 8 MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555 cm-1 to 1570 cm-1 and D-peak varying from 1361 cm-1 to 1365 cm-1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8 × 1017cm-3 eV-1 to 1.5 × 1019 cm-3 eV-1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications.

Original languageEnglish
Pages (from-to)2740-2746
Number of pages7
JournalMicroelectronics Reliability
Volume54
Issue number12
DOIs
Publication statusPublished - 01-12-2014

Fingerprint

Electron irradiation
Nanoclusters
Carbon films
electron irradiation
nanoclusters
microelectronics
Microelectronics
Electric properties
arcs
electrical properties
Thin films
carbon
room temperature
thin films
Flexible electronics
dosage
conductivity
Graphitization
Diamond
graphitization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics",
abstract = "The influence of 8 MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555 cm-1 to 1570 cm-1 and D-peak varying from 1361 cm-1 to 1365 cm-1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8 × 1017cm-3 eV-1 to 1.5 × 1019 cm-3 eV-1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications.",
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Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics. / De, Shounak; Satyanarayana, B. S.; Sanjeev, Ganesh; Ramakrishna, K.; Mohan Rao, K.; Pattabi, Manjunatha.

In: Microelectronics Reliability, Vol. 54, No. 12, 01.12.2014, p. 2740-2746.

Research output: Contribution to journalArticle

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T1 - Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics

AU - De, Shounak

AU - Satyanarayana, B. S.

AU - Sanjeev, Ganesh

AU - Ramakrishna, K.

AU - Mohan Rao, K.

AU - Pattabi, Manjunatha

PY - 2014/12/1

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N2 - The influence of 8 MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555 cm-1 to 1570 cm-1 and D-peak varying from 1361 cm-1 to 1365 cm-1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8 × 1017cm-3 eV-1 to 1.5 × 1019 cm-3 eV-1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications.

AB - The influence of 8 MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555 cm-1 to 1570 cm-1 and D-peak varying from 1361 cm-1 to 1365 cm-1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8 × 1017cm-3 eV-1 to 1.5 × 1019 cm-3 eV-1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications.

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