Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Original languageEnglish
Article number034105
JournalJournal of Applied Physics
Volume99
Issue number3
DOIs
Publication statusPublished - 01-02-2006

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laser ablation
dielectric properties
pulsed lasers
substitutes
permittivity
thin films
hysteresis
ferroelectricity
polarization
wurtzite
low voltage
high voltages
space charge
transition temperature
conduction
temperature
electric potential
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.",
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Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation. / Dhananjay; Nagaraju, J.; Krupanidhi, S. B.

In: Journal of Applied Physics, Vol. 99, No. 3, 034105, 01.02.2006.

Research output: Contribution to journalArticle

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AB - Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

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