Abstract
Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.
| Original language | English |
|---|---|
| Article number | 034105 |
| Journal | Journal of Applied Physics |
| Volume | 99 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 01-02-2006 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation. / Dhananjay; Nagaraju, J.; Krupanidhi, S. B.
In: Journal of Applied Physics, Vol. 99, No. 3, 034105, 01.02.2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation
AU - Dhananjay, null
AU - Nagaraju, J.
AU - Krupanidhi, S. B.
PY - 2006/2/1
Y1 - 2006/2/1
N2 - Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.
AB - Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500°C. Ferroelectricity in Zn 1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6μC/cm2 and 45kV/cm were obtained for Zn0.85Li 0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.
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U2 - 10.1063/1.2169508
DO - 10.1063/1.2169508
M3 - Article
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
M1 - 034105
ER -