Effect of post-deposition annealing on the properties of ZnO films obtained by high temperature, micro-controller based SILAR deposition

V. K. Ashith, Gowrish K. Rao, Sahana N. Moger, Smitha R

Research output: Contribution to journalArticle

3 Citations (Scopus)


The ZnO thin films were prepared by successive ionic layer adsorption and reaction (SILAR) method at elevated precursor temperature. The films were later subjected to post-deposition annealing at different temperatures. This annealing process was found to be beneficial as it improved the structural and optical properties of the films. The ZnO films obtained by SILAR were found to be polycrystalline with hexagonal crystal structure. The crystallite size of the films increased considerably after annealing. The annealed films also showed very high absorption in UV region with marginal change in band gap. Both the crystallite size and optical absorbance were found to increase proportionately with the annealing temperature.

Original languageEnglish
Pages (from-to)10669-10676
Number of pages8
JournalCeramics International
Issue number9
Publication statusPublished - 15-06-2018


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this