Electrical measurement of undercut in surface micromachined structures

Somashekara Bhat, Enakshi Bhattacharya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In a surface micromachined cantilever, the gap (g), beam thickness (t) and width gets modified during fabrication. Since performance of sensors and actuators strongly depend on the final geometry, it becomes essential that these parameters are measured. Two sets of oxide anchored cantilever beams of different lengths with 20 and 30μm widths are realised. On the released beams resonance frequency (fi) measurements are performed. For a given length, by finding the ratio between measured frequencies for two widths, we get the value of undercut. Using this value in the slope of a fi 2 versus L-4plot we get the Young's modulus (E) of beam material.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages702-705
Number of pages4
DOIs
Publication statusPublished - 2007
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16-12-200720-12-2007

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices, IWPSD
CountryIndia
CityMumbai
Period16-12-0720-12-07

Fingerprint

Cantilever beams
Actuators
Elastic moduli
Fabrication
Oxides
Geometry
Sensors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Bhat, S., & Bhattacharya, E. (2007). Electrical measurement of undercut in surface micromachined structures. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 702-705). [4472617] https://doi.org/10.1109/IWPSD.2007.4472617
Bhat, Somashekara ; Bhattacharya, Enakshi. / Electrical measurement of undercut in surface micromachined structures. Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. pp. 702-705
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Bhat, S & Bhattacharya, E 2007, Electrical measurement of undercut in surface micromachined structures. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472617, pp. 702-705, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 16-12-07. https://doi.org/10.1109/IWPSD.2007.4472617

Electrical measurement of undercut in surface micromachined structures. / Bhat, Somashekara; Bhattacharya, Enakshi.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 702-705 4472617.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Bhat S, Bhattacharya E. Electrical measurement of undercut in surface micromachined structures. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 702-705. 4472617 https://doi.org/10.1109/IWPSD.2007.4472617