Electrical switching studies on amorphous Ge-Te-Sn thin films

Chandasree Das, M. G. Mahesha, G. Mohan Rao, S. Asokan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages633-634
Number of pages2
Volume1349
EditionPART A
DOIs
Publication statusPublished - 12-09-2011
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26-12-201030-12-2010

Conference

Conference55th DAE Solid State Physics Symposium 2010
CountryIndia
CityManipal
Period26-12-1030-12-10

Fingerprint

thin films
ingots
electric potential
flash
quenching
evaporation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Das, C., Mahesha, M. G., Rao, G. M., & Asokan, S. (2011). Electrical switching studies on amorphous Ge-Te-Sn thin films. In Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010 (PART A ed., Vol. 1349, pp. 633-634) https://doi.org/10.1063/1.3606017
Das, Chandasree ; Mahesha, M. G. ; Rao, G. Mohan ; Asokan, S. / Electrical switching studies on amorphous Ge-Te-Sn thin films. Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. Vol. 1349 PART A. ed. 2011. pp. 633-634
@inproceedings{a0549852c65d4baa86104865be70a695,
title = "Electrical switching studies on amorphous Ge-Te-Sn thin films",
abstract = "Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.",
author = "Chandasree Das and Mahesha, {M. G.} and Rao, {G. Mohan} and S. Asokan",
year = "2011",
month = "9",
day = "12",
doi = "10.1063/1.3606017",
language = "English",
isbn = "9780735409057",
volume = "1349",
pages = "633--634",
booktitle = "Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010",
edition = "PART A",

}

Das, C, Mahesha, MG, Rao, GM & Asokan, S 2011, Electrical switching studies on amorphous Ge-Te-Sn thin films. in Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. PART A edn, vol. 1349, pp. 633-634, 55th DAE Solid State Physics Symposium 2010, Manipal, India, 26-12-10. https://doi.org/10.1063/1.3606017

Electrical switching studies on amorphous Ge-Te-Sn thin films. / Das, Chandasree; Mahesha, M. G.; Rao, G. Mohan; Asokan, S.

Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. Vol. 1349 PART A. ed. 2011. p. 633-634.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Electrical switching studies on amorphous Ge-Te-Sn thin films

AU - Das, Chandasree

AU - Mahesha, M. G.

AU - Rao, G. Mohan

AU - Asokan, S.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

AB - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

UR - http://www.scopus.com/inward/record.url?scp=80052492739&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052492739&partnerID=8YFLogxK

U2 - 10.1063/1.3606017

DO - 10.1063/1.3606017

M3 - Conference contribution

SN - 9780735409057

VL - 1349

SP - 633

EP - 634

BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

ER -

Das C, Mahesha MG, Rao GM, Asokan S. Electrical switching studies on amorphous Ge-Te-Sn thin films. In Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. PART A ed. Vol. 1349. 2011. p. 633-634 https://doi.org/10.1063/1.3606017