Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, D. M. Phase, R. J. Choudhary

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Abstract

The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

Original languageEnglish
Article number109068
Number of pages6
JournalVacuum
Volume172
DOIs
Publication statusPublished - 02-2020

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All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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