Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Indudhar Panduranga Vali; Pramoda Kumara Shetty; M. G. Mahesha; V. C. Petwal; Jishnu Dwivedi; D. M. Phase; R. J. Choudhary

doi:10.1016/j.vacuum.2019.109068

Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, D. M. Phase, R. J. Choudhary

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

Original language	English
Article number	109068
Number of pages	6
Journal	Vacuum
Volume	172
DOIs	https://doi.org/10.1016/j.vacuum.2019.109068
Publication status	Published - 02-2020

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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title = "Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts",

abstract = "The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.",

author = "Vali, {Indudhar Panduranga} and Shetty, {Pramoda Kumara} and Mahesha, {M. G.} and Petwal, {V. C.} and Jishnu Dwivedi and Phase, {D. M.} and Choudhary, {R. J.}",

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doi = "10.1016/j.vacuum.2019.109068",

language = "English",

volume = "172",

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TY - JOUR

T1 - Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Petwal, V. C.

AU - Dwivedi, Jishnu

AU - Phase, D. M.

AU - Choudhary, R. J.

PY - 2020/2

Y1 - 2020/2

N2 - The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

AB - The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

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JO - Vacuum

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Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Abstract

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