Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, D. M. Phase, R. J. Choudhary

Research output: Contribution to journalArticle

Abstract

The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

Original languageEnglish
Article number109068
Number of pages6
JournalVacuum
Volume172
DOIs
Publication statusPublished - 02-2020

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electron irradiation
Photoelectron spectroscopy
electric contacts
photoelectron spectroscopy
Irradiation
Defects
irradiation
Electrons
defects

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Vali, Indudhar Panduranga ; Shetty, Pramoda Kumara ; Mahesha, M. G. ; Petwal, V. C. ; Dwivedi, Jishnu ; Phase, D. M. ; Choudhary, R. J. / Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts. In: Vacuum. 2020 ; Vol. 172.
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abstract = "The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.",
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Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts. / Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M. G.; Petwal, V. C.; Dwivedi, Jishnu; Phase, D. M.; Choudhary, R. J.

In: Vacuum, Vol. 172, 109068, 02.2020.

Research output: Contribution to journalArticle

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T1 - Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts

AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Petwal, V. C.

AU - Dwivedi, Jishnu

AU - Phase, D. M.

AU - Choudhary, R. J.

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AB - The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact properties by current‒voltage (I−V) characteristics and X‒ray photoelectron spectroscopy (XPS) technique. The results have shown localized Fermi‒level pinning (FLP) due to grown‒in defects in n‒4H–SiC. The electron and gamma irradiation on Schottky contacts have shown zero‒bias offset in the I−V characteristics. The XPS studies revealed that the observed behaviour was mainly attributed to irradiation‒induced defects in n‒4H–SiC bulk and their role in tunneling mechanism rather than contribution from the surface or interface chemical features alone.

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