TY - JOUR
T1 - Enhancement in the Transport and Optoelectrical Properties of Spray Coated ZnO Thin Films by Nd Dopant
AU - Srivathsa, Manu
AU - Kumar, Pawan
AU - Goutam, U. K.
AU - Rajendra, B. V.
N1 - Funding Information:
The authors would like to thank Manipal Academy of Higher Education (MAHE) for providing a research facility. One of the authors Manu Srivathsa would like to thank UGC-DAE CSR Mumbai Centre for financial assistance (UDCSR/MUM/AO/CRS-M-315/2020/813). RRCAT Indore center for providing XPS facility. Dr. Sudha D Kamath, Department of Physics, MIT Manipal for providing the photoluminescence facility. Dr. Gowrish Rao K, Department of Physics, MIT Manipal for providing the photo-response facility.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022
Y1 - 2022
N2 - This research work focuses on the influence of Neodymium (Nd) doping (0–10 at.%) on the structural, optical, electrical, and photo-response properties of Zinc Oxide thin films deposited on glass substrates by cost-effective spray pyrolysis technique. For all the deposited films, the X-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the maximum intensity along the (1 0 1) plane. Using XRD data, the crystallite size, dislocation density, and micro-strain of the films were estimated. Compared to other films, Zn0.96Nd0.04O film exhibited higher crystallinity ~ 18 nm. At higher doping concentrations, a fibrous-granular mixed structure was observed. Above 80 percentage of transparency in the visible region and bandgap of 3.42 eV was observed for the Zn0.96Nd0.04O film. The decrease in Urbach energy with increase in the doping concentration indicated the improvement in crystallinity. The peaks related to band edge emission, zinc, and oxygen-related defects were observed in the photoluminescence analysis also increased band edge emission and lesser defects were observed in the Zn0.96Nd0.04O film. The highest charge carrier concentration ~ 1.7 × 1017 cm−3 and mobility ~ 62.8 cm2/Vs were noticed in of Zn0.96Nd0.04O film. When exposed to UV light, Zn0.96Nd0.04O film exhibited the maximum photocurrent ~ 10−4 A. Hence the Zn0.96Nd0.04O film can be used as a UV photodetector. Graphical Abstract: [Figure not available: see fulltext.].
AB - This research work focuses on the influence of Neodymium (Nd) doping (0–10 at.%) on the structural, optical, electrical, and photo-response properties of Zinc Oxide thin films deposited on glass substrates by cost-effective spray pyrolysis technique. For all the deposited films, the X-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the maximum intensity along the (1 0 1) plane. Using XRD data, the crystallite size, dislocation density, and micro-strain of the films were estimated. Compared to other films, Zn0.96Nd0.04O film exhibited higher crystallinity ~ 18 nm. At higher doping concentrations, a fibrous-granular mixed structure was observed. Above 80 percentage of transparency in the visible region and bandgap of 3.42 eV was observed for the Zn0.96Nd0.04O film. The decrease in Urbach energy with increase in the doping concentration indicated the improvement in crystallinity. The peaks related to band edge emission, zinc, and oxygen-related defects were observed in the photoluminescence analysis also increased band edge emission and lesser defects were observed in the Zn0.96Nd0.04O film. The highest charge carrier concentration ~ 1.7 × 1017 cm−3 and mobility ~ 62.8 cm2/Vs were noticed in of Zn0.96Nd0.04O film. When exposed to UV light, Zn0.96Nd0.04O film exhibited the maximum photocurrent ~ 10−4 A. Hence the Zn0.96Nd0.04O film can be used as a UV photodetector. Graphical Abstract: [Figure not available: see fulltext.].
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U2 - 10.1007/s13391-022-00381-5
DO - 10.1007/s13391-022-00381-5
M3 - Article
AN - SCOPUS:85142507524
JO - Electronic Materials Letters
JF - Electronic Materials Letters
SN - 1738-8090
ER -