TY - JOUR
T1 - Enhancement in thermoelectric figure of merit of bismuth telluride system due to tin and selenium co-doping
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Rao, Ashok
AU - Chattopadhyay, M. K.
N1 - Funding Information:
Ganesh Shridhar Hegde (GSH) would like to acknowledge the Manipal Academy of Higher Education for providing financial support from Dr. T. M. A. doctoral fellowship. Authors would like to thank Dr. Mahesha M. G, Dr. Dhananjaya Kekuda for their co-operation.
Publisher Copyright:
© 2021 Elsevier Ltd
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/6/1
Y1 - 2021/6/1
N2 - Thermoelectric performance of tin and selenium co-doped bismuth telluride in the temperature range 10–300 K, prepared by solid-state reaction is reported in the current work. The powder X-ray diffraction study reveals hexagonal crystal structure with R3‾m space group. Energy dispersive X-ray analysis confirms elemental composition within the experimental limits and Field Emission Scanning Electron Microscopy (FESEM) shows uniform grain density and porosity on the surface of the pristine and doped samples. The electrical resistivity shows quasi degenerate semiconducting behavior and the temperature dependent Seebeck coefficient confirms n-type semiconducting nature of the pristine as well as doped samples. The carrier concentration and carrier mobility are of the order 1025/m3 and 10−4 m2/Vs respectively. A significant reduction in the thermal conductivity has been found in the (Bi0.98Sn0.02)2Te2.7Se0.3 compound, leading to an enhancement in the power factor (PF) and thermoelectric figure of merit (ZT) by 3.2 and 13.5 times respectively as compared to that of the pristine sample Bi2Te3 at 300 K. The highest ZT value of about 0.27 is achieved for (Bi0.98Sn0.02)2Te2.7Se0.3 at 300 K.
AB - Thermoelectric performance of tin and selenium co-doped bismuth telluride in the temperature range 10–300 K, prepared by solid-state reaction is reported in the current work. The powder X-ray diffraction study reveals hexagonal crystal structure with R3‾m space group. Energy dispersive X-ray analysis confirms elemental composition within the experimental limits and Field Emission Scanning Electron Microscopy (FESEM) shows uniform grain density and porosity on the surface of the pristine and doped samples. The electrical resistivity shows quasi degenerate semiconducting behavior and the temperature dependent Seebeck coefficient confirms n-type semiconducting nature of the pristine as well as doped samples. The carrier concentration and carrier mobility are of the order 1025/m3 and 10−4 m2/Vs respectively. A significant reduction in the thermal conductivity has been found in the (Bi0.98Sn0.02)2Te2.7Se0.3 compound, leading to an enhancement in the power factor (PF) and thermoelectric figure of merit (ZT) by 3.2 and 13.5 times respectively as compared to that of the pristine sample Bi2Te3 at 300 K. The highest ZT value of about 0.27 is achieved for (Bi0.98Sn0.02)2Te2.7Se0.3 at 300 K.
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U2 - 10.1016/j.mssp.2020.105645
DO - 10.1016/j.mssp.2020.105645
M3 - Article
AN - SCOPUS:85099514905
VL - 127
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 105645
ER -