Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

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Abstract

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number1
DOIs
Publication statusPublished - 01-01-2013

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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