Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number1
DOIs
Publication statusPublished - 01-01-2013

Fingerprint

Heterojunctions
heterojunctions
Diodes
diodes
Fabrication
Thin films
fabrication
thin films
Charge density
Electric space charge
space charge
depletion
Energy gap
Activation energy
diagrams
activation energy
conduction
Hot Temperature
Substrates
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{9b8bda620ef9423295a69ce785cdec22,
title = "Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes",
abstract = "The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.",
author = "Rao, {Gowrish K.} and Bangera, {Kasturi V.} and Shivakumar, {G. K.}",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.cap.2012.08.001",
language = "English",
volume = "13",
pages = "298--301",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "1",

}

Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes. / Rao, Gowrish K.; Bangera, Kasturi V.; Shivakumar, G. K.

In: Current Applied Physics, Vol. 13, No. 1, 01.01.2013, p. 298-301.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

AU - Rao, Gowrish K.

AU - Bangera, Kasturi V.

AU - Shivakumar, G. K.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.

AB - The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.

UR - http://www.scopus.com/inward/record.url?scp=84866111543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866111543&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2012.08.001

DO - 10.1016/j.cap.2012.08.001

M3 - Article

VL - 13

SP - 298

EP - 301

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 1

ER -