Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes

Kasturi V. Bangera, Gowrish K. Rao, G. K. Shivakumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics.

Original languageEnglish
Title of host publicationEnabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
Pages328-331
Number of pages4
Volume1341
DOIs
Publication statusPublished - 11-11-2011
Event2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010 - Kuala Lumpur, Malaysia
Duration: 01-12-201003-12-2010

Conference

Conference2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
CountryMalaysia
CityKuala Lumpur
Period01-12-1003-12-10

Fingerprint

heterojunctions
diodes
vacuum
fabrication
conduction
vacuum deposition
thermionic emission
high vacuum
low voltage
high voltages
space charge
solar cells
glass

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Bangera, K. V., Rao, G. K., & Shivakumar, G. K. (2011). Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes. In Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010 (Vol. 1341, pp. 328-331) https://doi.org/10.1063/1.3587012
Bangera, Kasturi V. ; Rao, Gowrish K. ; Shivakumar, G. K. / Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes. Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. Vol. 1341 2011. pp. 328-331
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Bangera, KV, Rao, GK & Shivakumar, GK 2011, Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes. in Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. vol. 1341, pp. 328-331, 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010, Kuala Lumpur, Malaysia, 01-12-10. https://doi.org/10.1063/1.3587012

Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes. / Bangera, Kasturi V.; Rao, Gowrish K.; Shivakumar, G. K.

Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. Vol. 1341 2011. p. 328-331.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics.

AB - The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics.

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Bangera KV, Rao GK, Shivakumar GK. Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes. In Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. Vol. 1341. 2011. p. 328-331 https://doi.org/10.1063/1.3587012