Fabrication and surface modification of micro/nanoporous silicon

J. P. Kar, S. K. Mohanta, G. Bose, S. Tuli, A. Kamra, V. Mathur

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have studied surface and structural properties of micro/nanoporous silicon, synthesized by electrochemical etching of ptype Si (100) with different etching conditions. SEM studies reveal tunable pore sizes from 200 nm to 1.5 μm for etching time 5 to 30 min, and the thickness of pore walls decreases upto 20 nm for 30 min etching. AFM investigations reveal increase in roughness of the porous structure with increase in etching time and saturate around 250 nm at higher etching time. X-ray diffractogram of porous Si surface for etching time 20 min shows the appearance of two peaks at 2θ = 69.13° and 69.33°. For 30 min etching time a broad peak is observed at 2θ = 69.39°. The broadening may due to the size distributions of pore walls, and up ward shifts may due to relaxation of strain in the porous structure. FTIR investigations show the presence of Si-H bending in Si3-SiH groups at 624 cm-1, Si-O stretching in O-Si-O in between 1056-1160 cm -1. The bands at 2958, 2927, and 2856 cm-lare related to C-H stretching of CH3, CH2, and CH groups, which probably come from residual of HF-dimethylformamide.

Original languageEnglish
Pages (from-to)238-242
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume11
Issue number3
Publication statusPublished - 01-03-2009
Externally publishedYes

Fingerprint

Silicon
Surface treatment
Etching
etching
Fabrication
fabrication
silicon
Stretching
porosity
Electrochemical etching
Dimethylformamide
Pore size
Surface properties
Structural properties
surface properties
Surface roughness
roughness
X rays
atomic force microscopy
methylidyne

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kar, J. P., Mohanta, S. K., Bose, G., Tuli, S., Kamra, A., & Mathur, V. (2009). Fabrication and surface modification of micro/nanoporous silicon. Journal of Optoelectronics and Advanced Materials, 11(3), 238-242.
Kar, J. P. ; Mohanta, S. K. ; Bose, G. ; Tuli, S. ; Kamra, A. ; Mathur, V. / Fabrication and surface modification of micro/nanoporous silicon. In: Journal of Optoelectronics and Advanced Materials. 2009 ; Vol. 11, No. 3. pp. 238-242.
@article{630d081c485e44779d2eb18476a0dee5,
title = "Fabrication and surface modification of micro/nanoporous silicon",
abstract = "We have studied surface and structural properties of micro/nanoporous silicon, synthesized by electrochemical etching of ptype Si (100) with different etching conditions. SEM studies reveal tunable pore sizes from 200 nm to 1.5 μm for etching time 5 to 30 min, and the thickness of pore walls decreases upto 20 nm for 30 min etching. AFM investigations reveal increase in roughness of the porous structure with increase in etching time and saturate around 250 nm at higher etching time. X-ray diffractogram of porous Si surface for etching time 20 min shows the appearance of two peaks at 2θ = 69.13° and 69.33°. For 30 min etching time a broad peak is observed at 2θ = 69.39°. The broadening may due to the size distributions of pore walls, and up ward shifts may due to relaxation of strain in the porous structure. FTIR investigations show the presence of Si-H bending in Si3-SiH groups at 624 cm-1, Si-O stretching in O-Si-O in between 1056-1160 cm -1. The bands at 2958, 2927, and 2856 cm-lare related to C-H stretching of CH3, CH2, and CH groups, which probably come from residual of HF-dimethylformamide.",
author = "Kar, {J. P.} and Mohanta, {S. K.} and G. Bose and S. Tuli and A. Kamra and V. Mathur",
year = "2009",
month = "3",
day = "1",
language = "English",
volume = "11",
pages = "238--242",
journal = "Journal of Optoelectronics and Advanced Materials",
issn = "1454-4164",
publisher = "National Institute of Optoelectronics",
number = "3",

}

Kar, JP, Mohanta, SK, Bose, G, Tuli, S, Kamra, A & Mathur, V 2009, 'Fabrication and surface modification of micro/nanoporous silicon', Journal of Optoelectronics and Advanced Materials, vol. 11, no. 3, pp. 238-242.

Fabrication and surface modification of micro/nanoporous silicon. / Kar, J. P.; Mohanta, S. K.; Bose, G.; Tuli, S.; Kamra, A.; Mathur, V.

In: Journal of Optoelectronics and Advanced Materials, Vol. 11, No. 3, 01.03.2009, p. 238-242.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and surface modification of micro/nanoporous silicon

AU - Kar, J. P.

AU - Mohanta, S. K.

AU - Bose, G.

AU - Tuli, S.

AU - Kamra, A.

AU - Mathur, V.

PY - 2009/3/1

Y1 - 2009/3/1

N2 - We have studied surface and structural properties of micro/nanoporous silicon, synthesized by electrochemical etching of ptype Si (100) with different etching conditions. SEM studies reveal tunable pore sizes from 200 nm to 1.5 μm for etching time 5 to 30 min, and the thickness of pore walls decreases upto 20 nm for 30 min etching. AFM investigations reveal increase in roughness of the porous structure with increase in etching time and saturate around 250 nm at higher etching time. X-ray diffractogram of porous Si surface for etching time 20 min shows the appearance of two peaks at 2θ = 69.13° and 69.33°. For 30 min etching time a broad peak is observed at 2θ = 69.39°. The broadening may due to the size distributions of pore walls, and up ward shifts may due to relaxation of strain in the porous structure. FTIR investigations show the presence of Si-H bending in Si3-SiH groups at 624 cm-1, Si-O stretching in O-Si-O in between 1056-1160 cm -1. The bands at 2958, 2927, and 2856 cm-lare related to C-H stretching of CH3, CH2, and CH groups, which probably come from residual of HF-dimethylformamide.

AB - We have studied surface and structural properties of micro/nanoporous silicon, synthesized by electrochemical etching of ptype Si (100) with different etching conditions. SEM studies reveal tunable pore sizes from 200 nm to 1.5 μm for etching time 5 to 30 min, and the thickness of pore walls decreases upto 20 nm for 30 min etching. AFM investigations reveal increase in roughness of the porous structure with increase in etching time and saturate around 250 nm at higher etching time. X-ray diffractogram of porous Si surface for etching time 20 min shows the appearance of two peaks at 2θ = 69.13° and 69.33°. For 30 min etching time a broad peak is observed at 2θ = 69.39°. The broadening may due to the size distributions of pore walls, and up ward shifts may due to relaxation of strain in the porous structure. FTIR investigations show the presence of Si-H bending in Si3-SiH groups at 624 cm-1, Si-O stretching in O-Si-O in between 1056-1160 cm -1. The bands at 2958, 2927, and 2856 cm-lare related to C-H stretching of CH3, CH2, and CH groups, which probably come from residual of HF-dimethylformamide.

UR - http://www.scopus.com/inward/record.url?scp=76049108664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76049108664&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:76049108664

VL - 11

SP - 238

EP - 242

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

SN - 1454-4164

IS - 3

ER -

Kar JP, Mohanta SK, Bose G, Tuli S, Kamra A, Mathur V. Fabrication and surface modification of micro/nanoporous silicon. Journal of Optoelectronics and Advanced Materials. 2009 Mar 1;11(3):238-242.