Fabrication of highly c-axis Mg doped ZnO on c-cut sapphire substrate by rf sputtering for hydrogen sensing

K. Karthick, D. Srinivasan, J. Benedict Christopher

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Mg:ZnO films which are highly c-axis oriented were deposited on Al2O3 substrate by radio frequency sputtering for different substrate temperatures. It is observed from the crystal structure that the Mg dopants are well interspersed into ZnO wurtzite lattice. The substrate temperature shows remarkable impact on the luminescence properties, optical absorbance, bandgap and morphological properties of Mg:ZnO films. The surface topography of Mg doped ZnO film confirmed increased grain size with significant surface roughness and increased surface area, favorable for sensing. The Mg:ZnO/Al2O3 films fabricated at various temperature were examined for its sensing ability at 200 ppm of H2 at room temperature. The response and recovery time of Mg:ZnO sensor at 1400 °C are about 75 and 54 s, respectively. In the limit of 100–700 ppm, the sensor remained undeviated to the concentration of H2. It can be summarized that this significant performance of H2 sensor has potential for use as a portable room temperature gas sensor.

Original languageEnglish
Pages (from-to)11979-11986
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number16
DOIs
Publication statusPublished - 01-08-2017
Externally publishedYes

Fingerprint

Aluminum Oxide
Sapphire
Sputtering
Hydrogen
sapphire
sputtering
Fabrication
fabrication
sensors
Substrates
hydrogen
Sensors
Temperature
Optical band gaps
Surface topography
room temperature
Temperature sensors
Chemical sensors
wurtzite
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Karthick, K. ; Srinivasan, D. ; Christopher, J. Benedict. / Fabrication of highly c-axis Mg doped ZnO on c-cut sapphire substrate by rf sputtering for hydrogen sensing. In: Journal of Materials Science: Materials in Electronics. 2017 ; Vol. 28, No. 16. pp. 11979-11986.
@article{9506d5e1d9174c4fbc0deff11f5da7b7,
title = "Fabrication of highly c-axis Mg doped ZnO on c-cut sapphire substrate by rf sputtering for hydrogen sensing",
abstract = "Mg:ZnO films which are highly c-axis oriented were deposited on Al2O3 substrate by radio frequency sputtering for different substrate temperatures. It is observed from the crystal structure that the Mg dopants are well interspersed into ZnO wurtzite lattice. The substrate temperature shows remarkable impact on the luminescence properties, optical absorbance, bandgap and morphological properties of Mg:ZnO films. The surface topography of Mg doped ZnO film confirmed increased grain size with significant surface roughness and increased surface area, favorable for sensing. The Mg:ZnO/Al2O3 films fabricated at various temperature were examined for its sensing ability at 200 ppm of H2 at room temperature. The response and recovery time of Mg:ZnO sensor at 1400 °C are about 75 and 54 s, respectively. In the limit of 100–700 ppm, the sensor remained undeviated to the concentration of H2. It can be summarized that this significant performance of H2 sensor has potential for use as a portable room temperature gas sensor.",
author = "K. Karthick and D. Srinivasan and Christopher, {J. Benedict}",
year = "2017",
month = "8",
day = "1",
doi = "10.1007/s10854-017-7007-2",
language = "English",
volume = "28",
pages = "11979--11986",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "16",

}

Fabrication of highly c-axis Mg doped ZnO on c-cut sapphire substrate by rf sputtering for hydrogen sensing. / Karthick, K.; Srinivasan, D.; Christopher, J. Benedict.

In: Journal of Materials Science: Materials in Electronics, Vol. 28, No. 16, 01.08.2017, p. 11979-11986.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of highly c-axis Mg doped ZnO on c-cut sapphire substrate by rf sputtering for hydrogen sensing

AU - Karthick, K.

AU - Srinivasan, D.

AU - Christopher, J. Benedict

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Mg:ZnO films which are highly c-axis oriented were deposited on Al2O3 substrate by radio frequency sputtering for different substrate temperatures. It is observed from the crystal structure that the Mg dopants are well interspersed into ZnO wurtzite lattice. The substrate temperature shows remarkable impact on the luminescence properties, optical absorbance, bandgap and morphological properties of Mg:ZnO films. The surface topography of Mg doped ZnO film confirmed increased grain size with significant surface roughness and increased surface area, favorable for sensing. The Mg:ZnO/Al2O3 films fabricated at various temperature were examined for its sensing ability at 200 ppm of H2 at room temperature. The response and recovery time of Mg:ZnO sensor at 1400 °C are about 75 and 54 s, respectively. In the limit of 100–700 ppm, the sensor remained undeviated to the concentration of H2. It can be summarized that this significant performance of H2 sensor has potential for use as a portable room temperature gas sensor.

AB - Mg:ZnO films which are highly c-axis oriented were deposited on Al2O3 substrate by radio frequency sputtering for different substrate temperatures. It is observed from the crystal structure that the Mg dopants are well interspersed into ZnO wurtzite lattice. The substrate temperature shows remarkable impact on the luminescence properties, optical absorbance, bandgap and morphological properties of Mg:ZnO films. The surface topography of Mg doped ZnO film confirmed increased grain size with significant surface roughness and increased surface area, favorable for sensing. The Mg:ZnO/Al2O3 films fabricated at various temperature were examined for its sensing ability at 200 ppm of H2 at room temperature. The response and recovery time of Mg:ZnO sensor at 1400 °C are about 75 and 54 s, respectively. In the limit of 100–700 ppm, the sensor remained undeviated to the concentration of H2. It can be summarized that this significant performance of H2 sensor has potential for use as a portable room temperature gas sensor.

UR - http://www.scopus.com/inward/record.url?scp=85019564853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019564853&partnerID=8YFLogxK

U2 - 10.1007/s10854-017-7007-2

DO - 10.1007/s10854-017-7007-2

M3 - Article

VL - 28

SP - 11979

EP - 11986

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 16

ER -