Flexible cadmium telluride/cadmium sulphide thin film solar cells on mica substrate

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Polycrystalline thin film II-VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by heterojunction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/ CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673 K had better photovoltaic parameters. The efficiency of a typical device under 50 mW cm -2 illumination was estimated as 4%.

Original languageEnglish
Pages (from-to)1805-1808
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume23
Issue number10
DOIs
Publication statusPublished - 10-2012

Fingerprint

Cadmium sulfide solar cells
Cadmium telluride
cadmium tellurides
cadmium sulfides
Mica
Cadmium sulfide
mica
solar cells
Substrates
thin films
photovoltaic conversion
Thermal evaporation
Photocurrents
Light absorption
Conversion efficiency
photocurrents
Heterojunctions
heterojunctions
baths
absorptivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{9a2b3d44f3e94d8caa5f5f4967f8ef65,
title = "Flexible cadmium telluride/cadmium sulphide thin film solar cells on mica substrate",
abstract = "Polycrystalline thin film II-VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by heterojunction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/ CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673 K had better photovoltaic parameters. The efficiency of a typical device under 50 mW cm -2 illumination was estimated as 4{\%}.",
author = "Rajendra, {B. V.} and Dhananjaya Kekuda",
year = "2012",
month = "10",
doi = "10.1007/s10854-012-0666-0",
language = "English",
volume = "23",
pages = "1805--1808",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "10",

}

TY - JOUR

T1 - Flexible cadmium telluride/cadmium sulphide thin film solar cells on mica substrate

AU - Rajendra, B. V.

AU - Kekuda, Dhananjaya

PY - 2012/10

Y1 - 2012/10

N2 - Polycrystalline thin film II-VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by heterojunction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/ CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673 K had better photovoltaic parameters. The efficiency of a typical device under 50 mW cm -2 illumination was estimated as 4%.

AB - Polycrystalline thin film II-VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by heterojunction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/ CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673 K had better photovoltaic parameters. The efficiency of a typical device under 50 mW cm -2 illumination was estimated as 4%.

UR - http://www.scopus.com/inward/record.url?scp=84867262914&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867262914&partnerID=8YFLogxK

U2 - 10.1007/s10854-012-0666-0

DO - 10.1007/s10854-012-0666-0

M3 - Article

AN - SCOPUS:84867262914

VL - 23

SP - 1805

EP - 1808

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 10

ER -