Flexible fullerene field-Effect transistors fabricated through solution processing

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh Zheng Lee, Fang Chung Chen, Meng Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

Original languageEnglish
Pages (from-to)4845-4849
Number of pages5
JournalAdvanced Materials
Volume21
Issue number47
DOIs
Publication statusPublished - 18-12-2009

Fingerprint

Fullerenes
Thin film transistors
Field effect transistors
ITO glass
Vacuum deposition
Electron mobility
Substrates
Processing
Tin oxides
Threshold voltage
Indium
Transistors
Glass
indium tin oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sung, C. F., Kekuda, D., Chu, L. F., Lee, Y. Z., Chen, F. C., Wu, M. C., & Chu, C. W. (2009). Flexible fullerene field-Effect transistors fabricated through solution processing. Advanced Materials, 21(47), 4845-4849. https://doi.org/10.1002/adma.200901215
Sung, Chao Feng ; Kekuda, Dhananjay ; Chu, Li Fen ; Lee, Yuh Zheng ; Chen, Fang Chung ; Wu, Meng Chyi ; Chu, Chih Wei. / Flexible fullerene field-Effect transistors fabricated through solution processing. In: Advanced Materials. 2009 ; Vol. 21, No. 47. pp. 4845-4849.
@article{f112cd87760d43c7bb93dffb7909779b,
title = "Flexible fullerene field-Effect transistors fabricated through solution processing",
abstract = "C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)",
author = "Sung, {Chao Feng} and Dhananjay Kekuda and Chu, {Li Fen} and Lee, {Yuh Zheng} and Chen, {Fang Chung} and Wu, {Meng Chyi} and Chu, {Chih Wei}",
year = "2009",
month = "12",
day = "18",
doi = "10.1002/adma.200901215",
language = "English",
volume = "21",
pages = "4845--4849",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "47",

}

Flexible fullerene field-Effect transistors fabricated through solution processing. / Sung, Chao Feng; Kekuda, Dhananjay; Chu, Li Fen; Lee, Yuh Zheng; Chen, Fang Chung; Wu, Meng Chyi; Chu, Chih Wei.

In: Advanced Materials, Vol. 21, No. 47, 18.12.2009, p. 4845-4849.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Flexible fullerene field-Effect transistors fabricated through solution processing

AU - Sung, Chao Feng

AU - Kekuda, Dhananjay

AU - Chu, Li Fen

AU - Lee, Yuh Zheng

AU - Chen, Fang Chung

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2009/12/18

Y1 - 2009/12/18

N2 - C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

AB - C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

UR - http://www.scopus.com/inward/record.url?scp=73949136568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73949136568&partnerID=8YFLogxK

U2 - 10.1002/adma.200901215

DO - 10.1002/adma.200901215

M3 - Article

VL - 21

SP - 4845

EP - 4849

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 47

ER -