Flexible fullerene field-Effect transistors fabricated through solution processing

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh Zheng Lee, Fang Chung Chen, Meng Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

Original languageEnglish
Pages (from-to)4845-4849
Number of pages5
JournalAdvanced Materials
Volume21
Issue number47
DOIs
Publication statusPublished - 18-12-2009

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sung, C. F., Kekuda, D., Chu, L. F., Lee, Y. Z., Chen, F. C., Wu, M. C., & Chu, C. W. (2009). Flexible fullerene field-Effect transistors fabricated through solution processing. Advanced Materials, 21(47), 4845-4849. https://doi.org/10.1002/adma.200901215