Free volume related fluorescence properties of electron irradiated chalcone doped PMMA films

Ismayil V. Ravindrachary, R. F. Bhajantri, A. Harisha, S. D. Praveena

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effect of electron irradiation on free volume related fluorescence properties of chalcone doped Poly(methyl methacrylate) (PMMA) composite films have been studied using Positron Annihilation and Fluorescence spectroscopic techniques. In this polymer composite, enhancement of fluorescence at lower doses and reduction at higher doses has been observed under electron irradiation. From Positron annihilation studies suggests that at lower doses of irradiation induced crosslinking which affect the free volume properties and inturn hinders the chalcone molecular rotation. At higher doses chain scission process affect matrix relaxation. Under the restricted condition the chromophore molecules likely to emit enhanced fluorescence and its mobility is directly related to the free volume around it.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages196-197
Number of pages2
Volume1349
EditionPART A
DOIs
Publication statusPublished - 12-09-2011
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26-12-201030-12-2010

Conference

Conference55th DAE Solid State Physics Symposium 2010
CountryIndia
CityManipal
Period26-12-1030-12-10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Ravindrachary, I. V., Bhajantri, R. F., Harisha, A., & Praveena, S. D. (2011). Free volume related fluorescence properties of electron irradiated chalcone doped PMMA films. In Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010 (PART A ed., Vol. 1349, pp. 196-197) https://doi.org/10.1063/1.3605803