Growth and characterization of semiconducting cadmium selenide thin films

K. N. Shreekanthan, B. V. Rajendra, V. B. Kasturi, G. K. Shivakumar

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.

Original languageEnglish
Pages (from-to)30-33
Number of pages4
JournalCrystal Research and Technology
Volume38
Issue number1
DOIs
Publication statusPublished - 01-01-2003

Fingerprint

cadmium selenides
Cadmium
Thin films
thin films
Semiconducting films
Thermal evaporation
globules
Optical band gaps
Selenium
selenium
Temperature
cadmium
Activation energy
evaporation
activation energy
electrical resistivity
temperature
cadmium selenide
room temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Shreekanthan, K. N. ; Rajendra, B. V. ; Kasturi, V. B. ; Shivakumar, G. K. / Growth and characterization of semiconducting cadmium selenide thin films. In: Crystal Research and Technology. 2003 ; Vol. 38, No. 1. pp. 30-33.
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Growth and characterization of semiconducting cadmium selenide thin films. / Shreekanthan, K. N.; Rajendra, B. V.; Kasturi, V. B.; Shivakumar, G. K.

In: Crystal Research and Technology, Vol. 38, No. 1, 01.01.2003, p. 30-33.

Research output: Contribution to journalArticle

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