Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET

Dhananjay, J. Nagaraju, Palash Roy Choudhury, S. B. Krupanidhi

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn1-xLixO, x ≤ 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 °C and 100 mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250-373 K. A dielectric anomaly was observed at 360 K. The capacitance-voltage characteristics of Ag/Zn 0.75Li0.25O/Si exhibited clockwise hysteresis loops with a memory window of 2 V. The films deposited at 100 mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09 νC cm-2 and coercive field of 25 kV cm -1. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn0.75Li0.25O thin films were studied in the wavelength range 300-900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications.

Original languageEnglish
Article number005
Pages (from-to)2664-2669
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume39
Issue number13
DOIs
Publication statusPublished - 07-07-2006

Fingerprint

Field effect transistors
Ferroelectric materials
field effect transistors
Metals
Semiconductor materials
Thin films
thin films
metals
Hysteresis loops
Electric potential
hysteresis
capacitance-voltage characteristics
Remanence
Growth temperature
Electric current measurement
Laser ablation
polarization
Pulsed lasers
Electric space charge
Leakage currents

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Dhananjay ; Nagaraju, J. ; Choudhury, Palash Roy ; Krupanidhi, S. B. / Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET. In: Journal of Physics D: Applied Physics. 2006 ; Vol. 39, No. 13. pp. 2664-2669.
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Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET. / Dhananjay; Nagaraju, J.; Choudhury, Palash Roy; Krupanidhi, S. B.

In: Journal of Physics D: Applied Physics, Vol. 39, No. 13, 005, 07.07.2006, p. 2664-2669.

Research output: Contribution to journalArticle

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