Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, D. M. Phase, R. J. Choudhary

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMicroelectronics Reliability
Volume91
DOIs
Publication statusPublished - 01-12-2018

Fingerprint

Electron beams
Irradiation
electron beams
irradiation
Dosimetry
dosage
Photoelectrons
Band structure
energy bands
photoelectrons
diagrams
traps
Processing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Vali, Indudhar Panduranga ; Shetty, Pramoda Kumara ; Mahesha, M. G. ; Petwal, V. C. ; Dwivedi, Jishnu ; Phase, D. M. ; Choudhary, R. J. / Implications of electron beam irradiation on Al/n-Si Schottky junction properties. In: Microelectronics Reliability. 2018 ; Vol. 91. pp. 179-184.
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Implications of electron beam irradiation on Al/n-Si Schottky junction properties. / Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M. G.; Petwal, V. C.; Dwivedi, Jishnu; Phase, D. M.; Choudhary, R. J.

In: Microelectronics Reliability, Vol. 91, 01.12.2018, p. 179-184.

Research output: Contribution to journalArticle

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AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

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AU - Dwivedi, Jishnu

AU - Phase, D. M.

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