Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire

Varun Thakur, Sanjay Kumar Nayak, K. K. Nagaraja, S. M. Shivaprasad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same structure grown on bare sapphire. It is found that nitriding the c-plane sapphire prior to growth results in an improvement of crystalline quality of the resulting nanowall as observed by the reduction in FWHM of (0002) XRC.

Original languageEnglish
Title of host publication2014 IEEE 2nd International Conference on Emerging Electronics
Subtitle of host publicationMaterials to Devices, ICEE 2014 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467365277
DOIs
Publication statusPublished - 01-01-2014
Event2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014 - Bengaluru, India
Duration: 03-12-201406-12-2014

Publication series

Name2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings

Conference

Conference2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014
CountryIndia
CityBengaluru
Period03-12-1406-12-14

Fingerprint

Sapphire
Nitridation
Nitriding
Full width at half maximum
Molecular beam epitaxy
Crystalline materials
Nitrogen
Plasmas
Crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Thakur, V., Nayak, S. K., Nagaraja, K. K., & Shivaprasad, S. M. (2014). Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire. In 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings [7151177] (2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEmElec.2014.7151177
Thakur, Varun ; Nayak, Sanjay Kumar ; Nagaraja, K. K. ; Shivaprasad, S. M. / Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire. 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings).
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Thakur, V, Nayak, SK, Nagaraja, KK & Shivaprasad, SM 2014, Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire. in 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings., 7151177, 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., 2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014, Bengaluru, India, 03-12-14. https://doi.org/10.1109/ICEmElec.2014.7151177

Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire. / Thakur, Varun; Nayak, Sanjay Kumar; Nagaraja, K. K.; Shivaprasad, S. M.

2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. 7151177 (2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same structure grown on bare sapphire. It is found that nitriding the c-plane sapphire prior to growth results in an improvement of crystalline quality of the resulting nanowall as observed by the reduction in FWHM of (0002) XRC.

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Thakur V, Nayak SK, Nagaraja KK, Shivaprasad SM. Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire. In 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. 7151177. (2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings). https://doi.org/10.1109/ICEmElec.2014.7151177