Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

S. A. Savinov; K. K. Nagaraja; Yu A. Mityagin; P. A. Danilov; S. I. Kudryashov; A. A. Ionin; I. P. Kazakov; V. I. Tsekhosh; R. A. Khmelnitsky; V. I. Egorkin; M. P. Telenkov

doi:10.1016/j.optmat.2020.109716

Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

S. A. Savinov, K. K. Nagaraja, Yu A. Mityagin, P. A. Danilov, S. I. Kudryashov, A. A. Ionin, I. P. Kazakov, V. I. Tsekhosh, R. A. Khmelnitsky, V. I. Egorkin, M. P. Telenkov

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

Original language	English
Article number	109716
Journal	Optical Materials
Volume	101
DOIs	https://doi.org/10.1016/j.optmat.2020.109716
Publication status	Published - 03-2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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Savinov, S. A., Nagaraja, K. K., Mityagin, Y. A., Danilov, P. A., Kudryashov, S. I., Ionin, A. A., Kazakov, I. P., Tsekhosh, V. I., Khmelnitsky, R. A., Egorkin, V. I., & Telenkov, M. P. (2020). Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers. Optical Materials, 101, [109716]. https://doi.org/10.1016/j.optmat.2020.109716

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title = "Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers",

abstract = "Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.",

author = "Savinov, {S. A.} and Nagaraja, {K. K.} and Mityagin, {Yu A.} and Danilov, {P. A.} and Kudryashov, {S. I.} and Ionin, {A. A.} and Kazakov, {I. P.} and Tsekhosh, {V. I.} and Khmelnitsky, {R. A.} and Egorkin, {V. I.} and Telenkov, {M. P.}",

year = "2020",

month = mar,

doi = "10.1016/j.optmat.2020.109716",

language = "English",

volume = "101",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

TY - JOUR

T1 - Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

AU - Savinov, S. A.

AU - Nagaraja, K. K.

AU - Mityagin, Yu A.

AU - Danilov, P. A.

AU - Kudryashov, S. I.

AU - Ionin, A. A.

AU - Kazakov, I. P.

AU - Tsekhosh, V. I.

AU - Khmelnitsky, R. A.

AU - Egorkin, V. I.

AU - Telenkov, M. P.

PY - 2020/3

Y1 - 2020/3

N2 - Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

AB - Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

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JO - Optical Materials

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Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

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