Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

S. A. Savinov, K. K. Nagaraja, Yu A. Mityagin, P. A. Danilov, S. I. Kudryashov, A. A. Ionin, I. P. Kazakov, V. I. Tsekhosh, R. A. Khmelnitsky, V. I. Egorkin, M. P. Telenkov

Research output: Contribution to journalArticle

Abstract

Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

Original languageEnglish
Article number109716
JournalOptical Materials
Volume101
DOIs
Publication statusPublished - 03-2020

Fingerprint

Bismuth
Electron mobility
Epitaxial layers
Fiber lasers
Photocurrents
Molecular beam epitaxy
Fourier transform infrared spectroscopy
fiber lasers
Deterioration
Energy dispersive spectroscopy
emitters
Antennas
Heating
Thin films
Wavelength
Defects
Crystals
bows
electron mobility
deterioration

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Savinov, S. A., Nagaraja, K. K., Mityagin, Y. A., Danilov, P. A., Kudryashov, S. I., Ionin, A. A., ... Telenkov, M. P. (2020). Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers. Optical Materials, 101, [109716]. https://doi.org/10.1016/j.optmat.2020.109716
Savinov, S. A. ; Nagaraja, K. K. ; Mityagin, Yu A. ; Danilov, P. A. ; Kudryashov, S. I. ; Ionin, A. A. ; Kazakov, I. P. ; Tsekhosh, V. I. ; Khmelnitsky, R. A. ; Egorkin, V. I. ; Telenkov, M. P. / Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers. In: Optical Materials. 2020 ; Vol. 101.
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abstract = "Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.",
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Savinov, SA, Nagaraja, KK, Mityagin, YA, Danilov, PA, Kudryashov, SI, Ionin, AA, Kazakov, IP, Tsekhosh, VI, Khmelnitsky, RA, Egorkin, VI & Telenkov, MP 2020, 'Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers', Optical Materials, vol. 101, 109716. https://doi.org/10.1016/j.optmat.2020.109716

Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers. / Savinov, S. A.; Nagaraja, K. K.; Mityagin, Yu A.; Danilov, P. A.; Kudryashov, S. I.; Ionin, A. A.; Kazakov, I. P.; Tsekhosh, V. I.; Khmelnitsky, R. A.; Egorkin, V. I.; Telenkov, M. P.

In: Optical Materials, Vol. 101, 109716, 03.2020.

Research output: Contribution to journalArticle

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T1 - Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

AU - Savinov, S. A.

AU - Nagaraja, K. K.

AU - Mityagin, Yu A.

AU - Danilov, P. A.

AU - Kudryashov, S. I.

AU - Ionin, A. A.

AU - Kazakov, I. P.

AU - Tsekhosh, V. I.

AU - Khmelnitsky, R. A.

AU - Egorkin, V. I.

AU - Telenkov, M. P.

PY - 2020/3

Y1 - 2020/3

N2 - Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

AB - Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.

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