Investigation of transport properties of doped GaAs epitaxial layer using open photoacoustic cell

Sajan D. George; S. Dilna; P. Suresh Kumar; P. Radhakrishnan; V. P.N. Nampoori; C. P.G. Vallabhan

doi:10.1117/12.483079

Investigation of transport properties of doped GaAs epitaxial layer using open photoacoustic cell

Sajan D. George, S. Dilna, P. Suresh Kumar, P. Radhakrishnan, V. P.N. Nampoori, C. P.G. Vallabhan

Department of Atomic and Molecular Physics, Manipal

Research output: Contribution to journal › Article › peer-review

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Abstract

An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.

Original language	English
Pages (from-to)	267-273
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4918
DOIs	https://doi.org/10.1117/12.483079
Publication status	Published - 01-01-2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.483079

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abstract = "An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.",

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AU - George, Sajan D.

AU - Dilna, S.

AU - Kumar, P. Suresh

AU - Radhakrishnan, P.

AU - Nampoori, V. P.N.

AU - Vallabhan, C. P.G.

PY - 2002/1/1

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N2 - An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.

AB - An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.

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Investigation of transport properties of doped GaAs epitaxial layer using open photoacoustic cell

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