Investigations on magnetron sputtered ZnO thin films and Au/ZnO Schottky diodes

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Magnetron sputtering is a promising technique for the growth of oxide materials including ZnO, which allows deposition of films at low temperatures with good electrical properties. The current-voltage (I-V) characteristics of Au Schottky contacts on magnetron sputtered ZnO films have been measured over a temperature range of 278-358K. Both effective barrier height (φB,eff) and ideality factor (n) are found to be a function of temperature, and this behavior has been interpreted on the basis of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. Density of states (DOS) near the Fermi level is determined using a model based on the space charge limited current (SCLC). The dispersion in both real and imaginary parts of the dielectric constant at low frequencies, with increase in temperature is attributed to the space charge effect. Complex impedance plots exhibited two semicircles, which corresponds to bulk grains and the grain boundaries.

Original languageEnglish
Pages (from-to)344-349
Number of pages6
JournalPhysica B: Condensed Matter
Volume391
Issue number2
DOIs
Publication statusPublished - 01-04-2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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