Investigations on zinc oxide thin films grown on Si (1 0 0) by thermal oxidation

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Thin films of ZnO were grown on p-type Si (1 0 0) substrates by thermal oxidation. The in situ growth of the metallic Zn films were thermally oxidized at different temperatures ranging from 300 to 500 °C to yield ZnO thin films. The structural characterization of the thin films was carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements show that the films deposited at 500 °C had better crystalline quality than the rest. The electrical transport properties of the ZnO/Si heterojunction were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The heterojunction exhibited a barrier height, which is consistent with the energy difference between the work functions of Si and ZnO. Complex impedance spectroscopy measurements at temperatures ranging from 50 to 125 °C were performed on these heterojunctions.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume137
Issue number1-3
DOIs
Publication statusPublished - 25-02-2007

Fingerprint

Zinc Oxide
Zinc oxide
zinc oxides
Oxide films
Heterojunctions
heterojunctions
Thin films
Oxidation
oxidation
thin films
X ray diffraction
Capacitance measurement
Voltage measurement
diffraction
Transport properties
electrical measurement
x rays
transport properties
capacitance
Spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Thin films of ZnO were grown on p-type Si (1 0 0) substrates by thermal oxidation. The in situ growth of the metallic Zn films were thermally oxidized at different temperatures ranging from 300 to 500 °C to yield ZnO thin films. The structural characterization of the thin films was carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements show that the films deposited at 500 °C had better crystalline quality than the rest. The electrical transport properties of the ZnO/Si heterojunction were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The heterojunction exhibited a barrier height, which is consistent with the energy difference between the work functions of Si and ZnO. Complex impedance spectroscopy measurements at temperatures ranging from 50 to 125 °C were performed on these heterojunctions.",
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Investigations on zinc oxide thin films grown on Si (1 0 0) by thermal oxidation. / Dhananjay; Nagaraju, J.; Krupanidhi, S. B.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 137, No. 1-3, 25.02.2007, p. 126-130.

Research output: Contribution to journalArticle

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