Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses

Natalia Palina, Thomas Mueller, Shubhra Mohanti, Armin G. Aberle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm).

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2193-2197
Number of pages5
DOIs
Publication statusPublished - 01-12-2011
Externally publishedYes
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19-06-201124-06-2011

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19-06-1124-06-11

Fingerprint

Silicon wafers
Boron
Laser pulses
Solar cells
Doping (additives)
Lasers
Sheet resistance

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Palina, N., Mueller, T., Mohanti, S., & Aberle, A. G. (2011). Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2193-2197). [6186392] https://doi.org/10.1109/PVSC.2011.6186392
Palina, Natalia ; Mueller, Thomas ; Mohanti, Shubhra ; Aberle, Armin G. / Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. pp. 2193-2197
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Palina, N, Mueller, T, Mohanti, S & Aberle, AG 2011, Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186392, pp. 2193-2197, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19-06-11. https://doi.org/10.1109/PVSC.2011.6186392

Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. / Palina, Natalia; Mueller, Thomas; Mohanti, Shubhra; Aberle, Armin G.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2193-2197 6186392.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Palina N, Mueller T, Mohanti S, Aberle AG. Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2193-2197. 6186392 https://doi.org/10.1109/PVSC.2011.6186392