Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses

Natalia Palina, Thomas Mueller, Shubhra Mohanti, Armin G. Aberle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm).

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2193-2197
Number of pages5
DOIs
Publication statusPublished - 01-12-2011
Externally publishedYes
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19-06-201124-06-2011

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19-06-1124-06-11

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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