Low temperature studies of Bi doped Pr0.6Sr0.4MnO3 manganites

magnetization and magneto-transport

Pramod R. Nadig, K. R. Vighnesh, Anita D’Souza, Mamatha D. Daivajna

Research output: Contribution to journalArticle

Abstract

Low temperature magnetization and resistivity measurements of bismuth (Bi) doped Pr0.6−xBixSr0.4MnO3 (x = 0.2, 0.23 and 0.25) manganites synthesized by solid state reaction method are reported here. Resistivity measurements in all bismuth doped samples in the absence of field show no significant metal–insulator transition. But for x = 0.2, in zero field the transition observed at lower temperature is associated with hysteresis indicating its first order nature. The resistivity and magnetization measurements establish the coexistence of ferromagnetic metallic and antiferromagnetic insulating phase at lower temperature. We present magnetization and resistivity measurements on higher concentration of bismuth exhibiting the coexistence of two phases at low temperature and the kinetic arrest of a first-order ferromagnetic-to-antiferromagnetic transition.

Original languageEnglish
Pages (from-to)19965-19975
Number of pages11
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number23
DOIs
Publication statusPublished - 01-12-2018

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Manganites
Bismuth
bismuth
Magnetization
magnetization
electrical resistivity
Temperature
Solid state reactions
Hysteresis
hysteresis
solid state
Kinetics
kinetics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Low temperature studies of Bi doped Pr0.6Sr0.4MnO3 manganites: magnetization and magneto-transport",
abstract = "Low temperature magnetization and resistivity measurements of bismuth (Bi) doped Pr0.6−xBixSr0.4MnO3 (x = 0.2, 0.23 and 0.25) manganites synthesized by solid state reaction method are reported here. Resistivity measurements in all bismuth doped samples in the absence of field show no significant metal–insulator transition. But for x = 0.2, in zero field the transition observed at lower temperature is associated with hysteresis indicating its first order nature. The resistivity and magnetization measurements establish the coexistence of ferromagnetic metallic and antiferromagnetic insulating phase at lower temperature. We present magnetization and resistivity measurements on higher concentration of bismuth exhibiting the coexistence of two phases at low temperature and the kinetic arrest of a first-order ferromagnetic-to-antiferromagnetic transition.",
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Low temperature studies of Bi doped Pr0.6Sr0.4MnO3 manganites : magnetization and magneto-transport. / Nadig, Pramod R.; Vighnesh, K. R.; D’Souza, Anita; Daivajna, Mamatha D.

In: Journal of Materials Science: Materials in Electronics, Vol. 29, No. 23, 01.12.2018, p. 19965-19975.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low temperature studies of Bi doped Pr0.6Sr0.4MnO3 manganites

T2 - magnetization and magneto-transport

AU - Nadig, Pramod R.

AU - Vighnesh, K. R.

AU - D’Souza, Anita

AU - Daivajna, Mamatha D.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Low temperature magnetization and resistivity measurements of bismuth (Bi) doped Pr0.6−xBixSr0.4MnO3 (x = 0.2, 0.23 and 0.25) manganites synthesized by solid state reaction method are reported here. Resistivity measurements in all bismuth doped samples in the absence of field show no significant metal–insulator transition. But for x = 0.2, in zero field the transition observed at lower temperature is associated with hysteresis indicating its first order nature. The resistivity and magnetization measurements establish the coexistence of ferromagnetic metallic and antiferromagnetic insulating phase at lower temperature. We present magnetization and resistivity measurements on higher concentration of bismuth exhibiting the coexistence of two phases at low temperature and the kinetic arrest of a first-order ferromagnetic-to-antiferromagnetic transition.

AB - Low temperature magnetization and resistivity measurements of bismuth (Bi) doped Pr0.6−xBixSr0.4MnO3 (x = 0.2, 0.23 and 0.25) manganites synthesized by solid state reaction method are reported here. Resistivity measurements in all bismuth doped samples in the absence of field show no significant metal–insulator transition. But for x = 0.2, in zero field the transition observed at lower temperature is associated with hysteresis indicating its first order nature. The resistivity and magnetization measurements establish the coexistence of ferromagnetic metallic and antiferromagnetic insulating phase at lower temperature. We present magnetization and resistivity measurements on higher concentration of bismuth exhibiting the coexistence of two phases at low temperature and the kinetic arrest of a first-order ferromagnetic-to-antiferromagnetic transition.

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